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W/Si1-xGex Schottky Barrier: Effect of Stress and Composition
Published online by Cambridge University Press: 22 February 2011
Abstract
The Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.
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- Copyright © Materials Research Society 1994
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