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The Visible and the Infrared Luminescence Bands as a Tool for Characterization of the Porous Silicon Bandstructure

Published online by Cambridge University Press:  28 February 2011

V. Petrova-Koch ,
T. Muschik ,
G. Polisski  and
D. Kovalev
V. Petrova-Koch
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
T. Muschik
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
G. Polisski
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
D. Kovalev
Affiliation:
Physik-Department E 16, Technische Universität Munchen, James-Franck-Straβe, 85747 Garching, Germany.
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Abstract

The visible and the infrared photoluminescence bands in porous Si have been studied at low temperature for two series of samples: one in which the size of the crystallites has been varied and another in which the degree of surface degradation has been changed. It is shown that the relation of the two bands can be explored for characterization of the porous Si bandstructure. The size- and the surface dependence of the valence band and of the conduction band related states is discussed. A model is proposed for explanation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 483
Copyright
Copyright © Materials Research Society 1995

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References

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