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The Use of Cathodoluminescence in Gallium Nitride During Growth to Determine Substrate Temperature

Published online by Cambridge University Press:  01 February 2011

Kyoungnae Lee ,
Eric D Schires  and
Thomas H Myers
Kyoungnae Lee
Affiliation:
[email protected], west virginia university, G-30 Hodges Hall, Physics department, morgantown, WV, 26506, United States
Eric D Schires
Affiliation:
[email protected], west virginia university, United States
Thomas H Myers
Affiliation:
[email protected], west virginia university, United States
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Abstract

The Use of Cathodoluminescence in Gallium Nitride During Growth to Determine Substrate Temperature Accurate measurement of the substrate temperature during growth of gallium nitride by molecular beam epitaxy is crucial. Typically, thermocouples are usually used to measure the temperature of the back side of block which is holding the substrate. Alternatively, pyrometers are often used. However, there is a big range of an error. In-situ cathodoluminescence (CL) occurring during reflection high energy electron diffraction is a strong candidate to determine the growth temperature. The electron beam supplied by our RHEED gun has an energy of 13keV which was used for each measurement. CL was easily detected up to and beyond typical growth temperatures. The CL was directed into a monochromator using fiber optics. The final signal was detected with a photomultiplier tube. This technique appears quite useful to accurately and reproducably determine substrate temperature during growth.

The CL could also be observed using a ccd camera. Thus, we investigated using the CL to image the sample during growth. This could be used to see temperature inhomogenaities, and potentially to map alloy composition fluctuations. We calibrated the wavelength vs. growth temperature by using narrow band-pass interference filters. Background subtraction with blanking the e-beam could be used to remove black body radiation and other undesired sources of light. For gallium nitride, the photon energy at the growth temperature of 750°C is about 3.0eV. Using different filters, we can take a picture of e-beam on the surface of substrate for each filter and analyze the peak intensity using the line profile. We will present CL images of various samples at differing temperatures.

This work was supported by the AFOSR MURI F49620-03-1-0330 monitored by Todd Steiner and Gerald Witt and by ONR Grants N00014-02-1-0974 and N00014-01-1-0571, both monitored by Colin E. C. Wood.

Keywords

molecular beam epitaxy (MBE)electron irradiationIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF04-01
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. VanMil, B. L., Guo, Huicheng, Holbert, L. J., Lee, Kyoungnae, Myers, T. H., Liu, Ting, and Korakakis, D., J. of Vac. Sci. Technol., B 22, 2149 (2004)CrossRefGoogle Scholar
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