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Unusual Properties of the Red and Green Luminescence Bands in Ga-rich GaN

Published online by Cambridge University Press:  01 February 2011

M. A. Reshchikov  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
H. Morkoç
Affiliation:
Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
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Abstract

We studied photoluminescence (PL) from deep-level defects in GaN grown under Garich conditions at relatively low temperatures (700–800°C) by molecular-beam epitaxy (MBE). The dominant features of PL spectrum are red and green bands peaking respectively at ∼1.8 and ∼2.35 eV. Both PL bands decay exponentially at low temperatures (15 – 100 K) after pulsed excitation. The characteristic lifetime for the red band decreases by almost two orders of magnitude from 110 to 2 μs with increasing temperature from 15 to 100 K, while its integrated intensity after each pulse remains nearly unchanged in the same temperature range due to an increase in the peak intensity in the time-resolved PL curve. The lifetime of the green band remained unchanged in this temperature range. We suggest that these PL bands are caused by transitions between excited and ground states of some deep defects rather than transitions involving a shallow donor, conduction or valence bands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.7
Copyright
Copyright © Materials Research Society 2005

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References

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