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Thermal Stability in the <Si>/TiSi2/TiN/Al Metallization System

Published online by Cambridge University Press:  25 February 2011

A.H. Hamdi ,
N.S. Alvi ,
A. Kermani  and
M. Al-Kaisi
A.H. Hamdi
Affiliation:
General Motors Research Laboratories, Warren, MI
N.S. Alvi
Affiliation:
SEMATECH, Austin, TX
A. Kermani
Affiliation:
RAPRO Inc, Fremont, CA
M. Al-Kaisi
Affiliation:
Wyne State University, Detroit, MI
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Abstract

Stability in the temperature range between 450°C and 525°C of reactively sputter deposited TiN and TiN formed simultaneously with TiSi2 using transient annealing has been investigated in the <Si>/TiSi2/TiN/Al metallization system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 235
Copyright
Copyright © Materials Research Society 1989

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References

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