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Theoretical Model of Crystal Nucleation in PCM Nano-Glasses

Published online by Cambridge University Press:  01 February 2011

V. G. Karpov ,
Y. A. Kryukov ,
M. Mitra  and
I. V. Karpov
V. G. Karpov
Affiliation:
Physics and Astronomy, University of Toledo, Toledo, OH, 43606
Y. A. Kryukov
Affiliation:
[email protected], University of Toledo, Physics and Astronomy, Toledo, OH, 43606, United States
M. Mitra
Affiliation:
[email protected], University of Toledo, Physics and Astronomy, Toledo, OH, 43606, United States
I. V. Karpov
Affiliation:
[email protected], Intel Corporation, Santa Clara, CA, 95054, United States
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Abstract

We propose a theoretical analysis of crystal nucleation in disordered nano-glass structure of chalcogenide phase change memory. Statistical fluctuations of microscopic structure parameters translate into statistical distribution of nucleation times determining the transition from the highly resistive (glassy) to the low resistive (crystalline) state. This distribution is shown to be log-normal with the peak time exponentially dependent on field strength, temperature, cell area and material parameters.

Keywords

nucleation & growthmemorythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G01-07
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Lai, S. IEDM 2003 Technical Digest. IEEE International, p. 10.1.1 (2003). G. Atwood and R. Bez, Device Research Conference Digest, 63 29 (2005). A.L., Lacaita Solid-State Electronics, 50 , 24 (2006).Google Scholar
2. Adler, D. Henisch, H. Mott, N. Rev. Modern Phys., 50, 209 (1978). H., Fritzsche in Amorphous and liquid semiconductors, Ed. by J. Tauc, Plenum Press, London-New York, (1974) p. 313. D., Adler M. S., Shur M. Silver, S. R., Ovshinsky J.Appl.Phys, 51, 3289 (1980).Google Scholar
3. Russo, U. Ielmini, D. Redaelli, A. and Lacaita, Andrea L. IEEE Transactions on Electron Devices, 53, 3033 2006. ibid, p. 3041. U. Russo , D. Ielmini and A. L., Lacaita IEEE 07CH37867 45 th Annual International Reliability Physics Symposium, Phoenix, 547 (2007). A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L., Lacaita and Roberto Bez, IEEE Transactions on Device an dMaterial Reliability, 4, 422 (2004).Google Scholar
4. Landau, L. D. and Lifshitz, E. M. Statistical Physics, Oxford; New York: Pergamon Press, 1980 Google Scholar
5. Landau, L.D. Lifshits, I. M. Electrodynamics of continuous media, Oxford; New York: Pergamon, (1984).Google Scholar
6. Batygin, V.V. and Toptygin, I.N.. Problems in electrodynamics, London, New York, Academic Press (1964)Google Scholar
7. Liu, W. Liang, K. M. Zheng, Y. K. Guand, S. R. and Chen, H. J. Phys. D: Appl. Phys. 30 3366 (1997). C.C. Koch, Material Science and Engineering, A 287, 213 (2000).Google Scholar
8. Karpov, V. G. Kryukov, Y. A. Savransky, S. D. and Karpov, I. V. Appl. Phys. Lett. 90, 123504 (2007).Google Scholar
9. Tanaka, K. Iizima, S. Sugi, M. Kikichi, M. Solid State Commun., 8, 75 (1970).Google Scholar
10. Karpov, V.G. Kryukov, Y. A. Karpov, I. V. and Mitra, M. Phys. Rev. Lett. (2008).Google Scholar
11. Weinberg, M. C. and Nelson, G. F. J. Non-Crystalline Solids 74, 177 (1985). C., Barrett W. Nix and A., Tetelman The Principles of Engineering Materials, Prentice-Hall, Englewood Cliffs, NJ, 1973. X. S., Miao, L. P., Shi, H. K., Lee, J. M., Li, R., Zhao, P. K., Tan, K. G., Lim, H. X., Yang and T. C., Chong Jap. J. Appl. Phys., 45, 3955 (2006)Google Scholar