Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-28T15:20:26.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Fatigue Behavior of 300 nm Damascene Interconnect Using High Amplitude AC Tests*

Published online by Cambridge University Press:  01 February 2011

David T. Read ,
Roy Geiss  and
Glenn Alers
David T. Read
Affiliation:
[email protected], National Institute of Standards and Technology, Materials Reliability Division, Mail Stop 853.05, 325 Broadway, Boulder, CO, 80305-3328, United States, 3034973853, 3034975030
Roy Geiss
Affiliation:
[email protected], National Institute of Standards and Technology, Boulder, CO, 80305, United States
Glenn Alers
Affiliation:
[email protected], University of California at Santa Cruz, Santa Cruz, CA, 95064, United States
Get access

Abstract

The AC fatigue test technique, which uses cyclic joule heating to apply thermal cycles to thin-film structures, was applied to copper lines and vias in damascene dielectric structures on silicon substrates. Specimen chips with two different types of dielectric, oxide and low-k, were tested. The lines were 300 nm wide; various via widths were tested. At 100 Hz, cyclic temperature ranges from 400 to 900 °C produced line lifetimes between 10 and 1 million seconds. Similar lifetimes were reached in the vias for temperature ranges between 100 and 500 °C. The data were plotted as number of load reversals to failure against cyclic temperature range; the data trends for the two different types of dielectric were indistinguishable. When the line data were fit to the Basquin equation for mechanical fatigue, the temperature ranges for both dielectrics at the one1-reversal intercept were above 1000 °C. The via data were more scattered, but trended toward a lower intercept temperature.

Keywords

Cufatiguethermal stresses
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-09
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Monig, R.; Keller, R. R.; Volkert, C. A. Thermal fatigue testing of thin metal films, Review of Scientific Instruments 75 (11), 4997–5004, 2004.Google Scholar
[2] Keller, R. R.; Geiss, R. H.; Cheng, Y.-W.; Read, D. T. IMECE2004-61291: Microstructure Evolution During Alternating-Current-Induced Fatigue,in Proceedings of the International Mechanical Engineering Conference and Exposition 2004; American Society of Mechanical Engineers: 2004; pp. 107-112.Google Scholar
[3] Geiss, R. H.; Read, D. T.; Keller, R. R. TEM Study of Dislocation Loops in Deformed Aluminum Films, in Microscopy and Microanalysis 2005; 2005.Google Scholar
[4] Keller, R. R.; Geiss, R. H.; Cheng, Y.-W.; Read, D. T. Microstructure Evolution During Electric Current Induced Thermomechanical Fatigue of Interconnects, in MRS Proceedings 863: Materials, Technology and Reliability for Advanced Interconnects; Materials Research Society: Warrendale, Pa., 2005.Google Scholar
[5] Barbosa III, N.; Keller, R. R.; Read, D. T.; Geiss, R. H.; Vinci, R. P. Comparison of Electrical and Microtensile Evaluations of Mechanical Properties of an Aluminum Film, Metals and Materials Transactions A (To be published), 2007.Google Scholar
[6] Paik, J. M.; Park, H.; Joo, Y. C. Effect of low-k dielectric on stress and stress-induced damage in Cu interconnects, Microelectronic Engineering 71 (3-4), 348–357, 2004.Google Scholar
[7] Noyan, I. C.; Murray, C. E.; Chey, J. S.; Goldsmith, C. C. Finite size effects in stress analysis of interconnect structures, Applied Physics Letters 85 (5), 724–726, 2004.Google Scholar
[8] Paik, J. M.; Park, H.; Joo, Y. C.; Park, K. C. Effect of dielectric materials on stress-induced damage modes in damascene Cu lines, Journal of Applied Physics 97 (10), 2005.Google Scholar
[9] Murray, C. E.; Goldsmith, C. C.; Shaw, T. M.; Doyle, J. P.; Noyan, I. C. Thermal stress evolution in embedded Cu/low-k dielectric composite features, Applied Physics Letters 89 (1), 2006.Google Scholar
[10] Oliver, W. C.; Pharr, G. M. Measurement of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology, Journal of Materials Research 19 (1), 3–20, 2004.Google Scholar
[11] Schuster, C. E.; Vangel, M. G.; Schafft, H. A. Improved estimation of the resistivity of pure copper and electrical determination of thin copper film dimensions, Microelectronics Reliability 41 (2), 239–252, 2001.Google Scholar