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A Study of Band Alignment in GaAs/GaInP(Partially Ordered) Heterostructures with High Pressure

Published online by Cambridge University Press:  10 February 2011

K. Uchida ,
P. Y. Yu ,
J. Zeman ,
S. H. Kwok ,
K. L. Teo ,
Z. P. Su ,
G. Martinez ,
T. Arai  and
K. Matsumoto
K. Uchida
Affiliation:
Department of Communications and Systems, University of Electro-communications, Choru, Tokyo, Japan.
P. Y. Yu
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
J. Zeman
Affiliation:
Grenoble High Magnetic Field Lab., MPI-FKF/CNRS, Grenoble Cedex 9, France.
S. H. Kwok
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
K. L. Teo
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
Z. P. Su
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
G. Martinez
Affiliation:
Grenoble High Magnetic Field Lab., MPI-FKF/CNRS, Grenoble Cedex 9, France.
T. Arai
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300–33, Japan.
K. Matsumoto
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300–33, Japan.
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Abstract

In this paper we review the use of high pressure techniques to investigate the optical properties of partially ordered GalnP epitaxial layers grown on GaAs substrates. In particular, we demonstrate the ability of high pressure to modify the band alignment at the GalnP/GaAs interface and hence to alter the optical properties of heterostructures fabricated from partially ordered GalnP on GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 381
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. See, for example, Ikeda, M., Nakano, K., Mori, Y., Kaneko, K., and Watanabe, N., Appl. Phys. Lett. 48, 89 (1986);Google Scholar
Ishikawa, M., Ohba, Y., Sugawara, H., Yamamoto, M., and Nakanisi, T., Appl. Phys. Lett. 48, 207 (1986).Google Scholar
2. Ikeda, M.,, Nakano, K., Mori, Y., Kaneko, K., and Watanabe, N., J. Cryst. Growth, 77, 380 (1986).Google Scholar
3. Suzuki, T., Gomyo, A., Iijima, S., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T., Jpn. J. Appl. Phys. 27, 2098 (1988).Google Scholar
4. Gomyo, A., Suzuki, T., and Ijima, S., Phys. Rev. Lett. 60, 2645 (1988).Google Scholar
5. Patel, D., Chen, J., Kurtz, S. R., Olson, J.M., Quigley, J. H., Hafich, M. J. and Robinson, G. Y., Phys. Rev. B 39,10978 (1989).Google Scholar
6. Uchida, K., Yu, P. Y., Noto, N., and Weber, E., Appl. Phys. Lett. 64, 2858 (1994).Google Scholar
7. Zeman, J., Martinez, G., Yu, P. Y. and Uchida, K., Phys. Rev. B 35, R13428 (1997).Google Scholar
8. Guimaraes, F. E., Elsner, B., Westphalen, R., Spangenberg, B., Geelen, H. J., and Wilkene, B. J., J. Cryst. Growth 124, 199 (1992).Google Scholar
9. Tsai, C. Y., Moser, M., Geng, C., Harle, V., Forner, T., Michler, P., Hangleiter, A. and Scholz, F., J. Cryst. Growth 145, 786 (1994).Google Scholar
10. Liu, Q., Derksen, S., Lindner, A., Scheffer, F., Prost, W. and Tegude, F.-J., J. Appl. Phys. 77, 1154(1995).Google Scholar
11. Uchida, U.K., Arai, T. and Matsumoto, K., J. Appl. Phys. 81, 771 (1997).Google Scholar
12. Paul, W., J. Appl. Phys. 32, 2082 (1961).Google Scholar
13. Yu, P. Y. and Welber, B., Solid State Commun. 25, 209 (1978).Google Scholar
14. Chen, J., Sites, J. R., Spain, I. L., Hafich, M. J. and Robinson, G. Y., Appl. Phys. Lett. 58, 744(1991).Google Scholar
15. Wei, S. H. and Zunger, A., Appl. Phys. Lett. 56, 662 (1990).Google Scholar
16. Kurtz, S. R., J. Appl. Phys. 74, 4130 (1993).Google Scholar
17. Dong, J., Wang, Z., Lu, D., Liu, X., Li, X., Sun, D., Wang, Z., and Kong, M., Appl. Phys. Lett. 68, 1711(1996).Google Scholar
18. Kobayashi, T., Ohtsji, M., and Deol, R. S., J. Appl. Phys. 74, 2752 (1993).Google Scholar
19. Su, Z.P., Teo, K.L., Yu, P. Y., Uchida, K. and Dong, J.. Solid State Commun. 99, 933(1996).Google Scholar
20. Driessen, F. A. J. M., Appl. Phys. Lett. 67, 2813 (1995).Google Scholar
21. Teo, K. L., Su, Z. P., Yu, P. Y., and Uchida, K., in the Proc. of the 23rd Internat, conf. on The Physics of Semiconductors, ed. by Scheffler, M. and Zimmermann, R. (World Scientific, Singapore, 1996)p. 489.Google Scholar
22. Kroemer, H., Chien, Wu-Yi, Harris, J. S. and Edwall, D., Appl. Phys. Lett. 36, 295 (1980).Google Scholar
23. Feng, S. L., Feng, S. L., Krynicki, J., Donchev, V., Bourgoin, J. C., Forte-Poisson, M. D., Brylinski, C., Delage, S., Blanek, H. and Alaya, S., Semicond. Sci. Technol. 8, 2092 (1993) and reference therein.Google Scholar
24. Froyen, S., Zunger, A. and Mascarenhas, A., Appl. Phys. Lett. 68, 2852 (1996).Google Scholar
25. Zeman, J., Martinez, G., Yu, P. Y. and Uchida, K., (unpublished).Google Scholar
26. Cho, Y. H., Kim, D.S., Choe, B. D., H. Lim… Phys. Rev. B 56, R4375 (1997).Google Scholar
27. Omnes, F. and Razeghi, M., Appl. Phys. Lett. 59, 1034 (1991).Google Scholar
28. Bhat, R., Kozn, M. A., Brasil, M. J. S. P., Nahory, R. E., Palmstrom, C. J. and Wilkene, C. J., J. Cryst. Growth 124, 576 (1992).Google Scholar
29. Kwok, S. H., Yu, P. Y., Uchida, K. and Arai, T., J. Appl. Phys. 82, 3630 (1997).Google Scholar
30. Kwok, S. H., Yu, P. Y., Uchida, K. and Arai, T., Appl. Phys. Lett. 71, 1110 (1997).Google Scholar
31. Kwok, S. H., Yu, P. Y., Uchida, K. and Arai, T., in this volume.Google Scholar
32. Chadi, D. J. and Chang, K. J., Phys. Rev. Lett. 61, 873 (1988); Phys. Rev. B 39, 10366 (1989).Google Scholar
33. Zeman, J., Martinez, G., Kwok, S. H., Yu, P. Y., and Uchida, K.. To appear in the Proceedings of the 12tn International Conference on Electronic Properties of Two-Dimensional Systems held in Tokyo, Japan, September 22Google Scholar