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Structural, Electrical, and Optical Properties of Erbium-Doped Epitaxial BaTiO3 Films Grown by RF Sputtering

Published online by Cambridge University Press:  15 February 2011

Pedro Barrios ,
Cheng Chung Li ,
Hong Koo Kim  and
Jean Blachere
Pedro Barrios
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Cheng Chung Li
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Hong Koo Kim
Affiliation:
University of Pittsburgh, Department of Electrical Engineering, Pittsburgh, PA 15261
Jean Blachere
Affiliation:
University of Pittsburgh, Department of Materials Science and Engineering, Pittsburgh, PA 15261.
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Abstract

We have investigated the epitaxial growth of Er-doped BaTiO3 films using rf magnetron sputtering. The Er-doped films (0.5 - 1 μm thick) were deposited on MgO (001) single-crystal substrates at various temperatures (500 - 800 °C). The films deposited at 700 °C or above arehighly (001)- oriented with an in-plane epitaxial relationship of BaTiO3[100] ║ MgO[100], as confirmed by X-ray diffraction. The Er doped films were found to be compressively stressed, as-deposited. The amount of stress monotonically decreases as a function of the deposition temperature. The Er-doped epitaxial films show a strong room-temperature photoluminescence at 1.54 μm, which corresponds to intra-transitions of Er3+ ions. Electrical characterizationswere carried out on Er-doped BaTiO3 films that were grown on MgO with a conducting In203 buffer electrode. The measurement shows that the Er-doped BaTiO3 films are ferroelectric with a remanent polarization of 1.5 μC/cm2 and a coercive field of 40 kV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 279
Copyright
Copyright © Materials Research Society 1996

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