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Structural and Optical Characteristics of Thin Films Deposited by Ionized Cluster Beam

Published online by Cambridge University Press:  21 February 2011

Isao Yamada
Isao Yamada*
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
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Abstract

In ionized cluster beam (ICB) deposition, crystal properties can be controlled by changing the acceleration voltage and the ionization current. Therefore, the physical and chemical characteristics of the deposited films can be controlled. This controllability in ICB deposition allows one to deposit new optical films. These films are expected to have many new applications over optical range from x-ray to visible. This paper describes film examples for an X-ray mirror with low stray scattering, for an excimer laser mirror with very high damage threshold power and for dielectric optical coatings. These results show that the ICB technique offers much potential for developing new optical thin films in a wide range of applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 183
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Yamada, I., Usui, H., and Takagi, T., J. Phys. Chem. 91,2463 (1987).CrossRefGoogle Scholar
[2] Yamamura, Y., Yamada, I., and Takagi, T., Nuc. Inst. Methd., B37/38, 902 (1989).CrossRefGoogle Scholar
[3] Yamada, I. and Takagi, T., IEEE Trans.,ED–34, 1018 (1987).Google Scholar
[4] Yamada, I., Usui, H., Harumoto, H., and Takagi, T., in Laser and Particle-beam Chemical Processing for Microelectronics, edited by D.J., Ehrlich, G.S., Higashi, and M.M., Oprysko (Mater. Res. Soc. Proc., 101, Pittsburgh, PA 1988) pp.195–200.Google Scholar
[5] Sosnowski, M. and Yamada, I.. Nuc. Inst. Methd., B37/38, 874 (1989).Google Scholar
[6] Fukushima, K., Yamada, I., and Takagi, T., J. App. Phys., 58, 4146 (1988).Google Scholar
[7] Hashimoto, H., Levenson, L.L., Usui, H., Yamada, I., and Takagi, T., J. Appl. Phys., 63, 241 (1988).CrossRefGoogle Scholar
[8] Yamada, I., to be printed in Processing and Characterization of Materials Usinq Ion Beams, edited by L.E., Rehn, J.E., Greene and F.A., Smidt (Mater. Res. Soc. Proc., Pittsburgh, PA 1989)Google Scholar
[9] Hashimoto, Y., Maeyama, T., and Machida, K., Spring Meeting of Japn. Inst. Metallurgy paper No 552( 1988).Google Scholar
[10] Kunieda, H., Hayakawa, S., Hirano, T., Kii, T., Nagase, F., Sato, N., Tawara, Y., Makino, F., and Yamashita, K., Japn. J. Appl. Phys. 25, 1292 (1986).Google Scholar
[11] Yamada, I., Inokawa, H., and Takagi, T., J. Appl. Phys., 56, 2746 (1984).Google Scholar
[12] Yamada, I., Palmstrom, C.P., Kennedy, E., Mayer, J.W., Inokawa, H., and Takagi, T., in Layered Structures, Epitaxy, and Interfaces, edited by J.M., Gibson and L.R., Dawson (Mater. Res. Soc. Proc. 37, Pittsburgh, PA 1985) pp.401–406.Google Scholar