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Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy

Published online by Cambridge University Press:  28 February 2011

R. Hull ,
J.C. Bean ,
J.M. Bonar  and
L. Peticolas
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.M. Bonar
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. Peticolas
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The relaxation of strained epitaxial layers by the introduction of misfit dislocations is reviewed. Current theoretical and experimental understanding of the nucleation, propagation and interaction of misfit dislocations are summarized. The ramifications for applicability of strained layer epitaxy to practical device structures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 459
Copyright
Copyright © Materials Research Society 1990

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References

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