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Stabilization of Hydrogen‐Free Cvd‐ Sio2 Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Annealing effects have been investigated for the SiO2 films deposited from a Tetra‐Iso‐Cyanate‐Silane and Tertiary‐Alkyl‐Amine gas mixture in order to stabilize its desirable hydrogen‐free property. It was found that O3 annealing eliminates effectively the NCO‐group from the deposited film, resulting in the improved water resistance characteristics, and that HF changes the Si‐NCO bonds to Si‐F bonds resulting also in improved film properties.
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- Copyright © Materials Research Society 1997
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