Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T21:59:34.321Z Has data issue: false hasContentIssue false

Sputtered Fitas of Amorphous Hydrogenated Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

Richard B. Rizk
Affiliation:
Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Alain E. Kaloyeros
Affiliation:
Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Wendell S. Williams
Affiliation:
Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Nancy Finnegan
Affiliation:
Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Carol Kozlowski
Affiliation:
Materials Research Laboratory and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Get access

Extract

The field of amorphous hydrogenated silicon-carbon alloys and thin films has witnessed, since the pioneering work of Anderson and Spear [1], rapid development and has attracted scientific attention and technological interest [2,3]. However, relatively little information is known [4] about the physical mechanisms that govern the inclusion of C and H in the silicon matrix, the nature of the chemical bonds involved, and the structural changes that result in the amorphous phase. Clearly, further fundamental studies are needed to achieve complete understanding of such amorphous systems with variable disorder.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Anderson, D.A. and Spear, W.E., Philos. Mag. 35, 1 (1977).Google Scholar
[2] Shimada, T., Katayama, Y., and Komatsubara, K.F., J. Appl. Phys. 50, 5530 (1979).Google Scholar
[3] Lee, W.-Y., J. Appl. Phys. 51, 3365 (1980).Google Scholar
[4] Bauer, G.H., Mohring, H.D., Bilger, G., and Eicke, A., J. Non-Cryst. Solids 77 & 78, 873 (1985).Google Scholar
[5] Carriere, B. and Deville, J.P., Surf. Sci. 80, 278 (1979).Google Scholar
[6] Hass, T.W., Grant, J.T., and Dooley, G.J. III, J. Appl. Phys. 43, 1853 (1972).Google Scholar
[7] Engemann, D., Fischer, R., and Knecht, J., Appl. Phys. Lett. 32, 367 (1978).Google Scholar
[8] Weissmann, R., Schnellhammer, W., Koschatzky, R., and Muller, K., Appl. Phys. 14, 283 (1977).Google Scholar
[9] Melliar-Smith, C.M., J. Vac. Sci. Technol. 13, 1010 (1976).Google Scholar
[10] Pauling, L., The Nature of the Chemical Bond, 3rd ed. (Cornell University Press, New York, 1960), p. 85.Google Scholar
[11] Katayama, Y., Usami, K., and Shimada, T., Philos. Mag. 43, 283 (1981).Google Scholar