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Spectral Characterization of Persistent Photo Conductance in SiC

Published online by Cambridge University Press:  01 February 2011

Steven Smith ,
Andrew Evwaraye  and
William Mitchel
Steven Smith
Affiliation:
[email protected], University of Dayton Research Institute, Metals and Ceramics Division, 300 College Park, Dayton, OH, 45469-0178, United States, 937-255-9909
Andrew Evwaraye
Affiliation:
[email protected], University of Dayton, Physics, Dayton, OH, 45469, United States
William Mitchel
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/MLPS, WPAFB, OH, 45433-7707, United States
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Abstract

The transient photo response of 4H- and 6H-SiC specimens at various wavelengths has been studied using Optical Admittance Spectroscopy. Differences in the transient response were found for excitation and recombination for different specimens in both materials. The results indicate that optical excitation of charge carriers to the conduction band is a single transition, but recombination of free carriers from the conduction band is a process involving multiple transitions to the ground state mediated by deep centers in the material. Similarities in the persistent photoconductance after excitation from deep centers, and after excitation at above bandgap energies, suggest that carriers from the conduction band drop through deep centers on the way to the valence band.

Keywords

defectselectrical propertiesphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B05-05
Copyright
Copyright © Materials Research Society 2006

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References

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