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Sol-Gel Thin Film Electronic Properties
Published online by Cambridge University Press: 28 February 2011
Abstract
We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel derived silicate thin films and have identified several factors that strongly affect the thin film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown SiO2 film on Si.
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- Copyright © Materials Research Society 1990
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