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Soi by CVD: An Overview of Material Aspects and Implications of Device Properties

Published online by Cambridge University Press:  22 February 2011

L. Jastrzebski  and
A. G. Kokkas
L. Jastrzebski
Affiliation:
RCA Laboratories, Princeton, NJ 08540
A. G. Kokkas
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

Two CVD techniques producing monocrystalline SOI films, silicon-on sapphire (SOS) and Epitaxial Lateral Overgrowth (ELO), are described and the nature of the crystallographic defects in the films is discussed. The geometrical structure of SOI devices, device properties, dynamic characteristics, capacitance, and radiation hardness are then examined with emphasis on evaluating the potential of SOI technologies in future applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 417
Copyright
Copyright © Materials Research Society 1984

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References

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