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Short-Channel Effect Suppression In Silicon Carbide Power Mesfets

Published online by Cambridge University Press:  21 March 2011

A. Konstantinov ,
A-M. Saroukhan ,
S. Karlsson ,
C. Harris  and
A. Litwin
A. Konstantinov
Affiliation:
ACREO AB, Electrum-236, SE-164 40, Kista, Sweden
A-M. Saroukhan
Affiliation:
ACREO AB, Electrum-236, SE-164 40, Kista, Sweden
S. Karlsson
Affiliation:
ACREO AB, Electrum-236, SE-164 40, Kista, Sweden
C. Harris
Affiliation:
ACREO AB, Electrum-236, SE-164 40, Kista, Sweden
A. Litwin
Affiliation:
Ericsson Microelectronics AB, SE-164 81, Kista, Sweden.
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Abstract

We demonstrate that the performance of silicon carbide MESFETs is largely determined by short-channel effects. Parasitic bipolar transistor turn-on limits the operation voltage to a small fraction of the theoretically expected value for an ideal device. Tradeoffs are shown to exist between optimum gate length and on-state current on one hand, and the maximum blocking voltage on the other hand. Composite p-buffers with an elevated doping in the vicinity of the active layer considerably increase the operation voltage. Silicon carbide MESFETs utilizing composite buffers are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H4.6
Copyright
Copyright © Materials Research Society 2001

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References

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