Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T10:45:48.352Z Has data issue: false hasContentIssue false

Selective Titanium Oxide Formation Using Electron-beam Induced Carbon Deposition Technique

Published online by Cambridge University Press:  11 February 2011

Thierry Djenizian
Affiliation:
Dept. of Materials Science, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, D-91058, Erlangen, Germany
Jan Macak
Affiliation:
Dept. of Materials Science, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, D-91058, Erlangen, Germany
Patrik Schmuki
Affiliation:
Dept. of Materials Science, LKO, University of Erlangen-Nuremberg, Martensstrasse 7, D-91058, Erlangen, Germany
Get access

Abstract

The present work describes the selective titanium oxide formation based on electron-beam (e-beam) induced carbon deposition used as a mask against chemical dissolution. Under ideal conditions the C-deposits act as a negative resist to hinder the titanium oxide dissolution at e-beam treated locations. Carbon patterns were written in a scanning electron microscope at different electron doses on titanium oxide electrochemically grown in 1 M NaOH by potentiostatic experiments. Subsequently, the untreated areas were chemically removed in 0.5 % HF leaving the C-protected TiO2 patterns at the Ti surface. The selectivity of the technique depends on several factors such as the electron dose during masking and the chemical parameters. Under ideal conditions, it is demonstrated that direct patterning of surfaces as well as the fabrication of microstructures can be achieved using such technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Boyan, B. D., Hummert, T. W., Dean, D. D., and Schwartz, Z., Biomaterials 17, 137 (1996).Google Scholar
2. Dubois, E. and Bubbedorff, J. L., Solid-State Electronics 43, 1085 (1999).Google Scholar
3. Madore, C., Piotrowski, O., and Landolt, D., J. Electrochem. Soc. 146, 2526 (1999).Google Scholar
4. Djenizian, T., Santinacci, L., and Schmuki, P., Appl. Phys. Lett. 78, 2840, (2001).Google Scholar
5. Djenizian, T., Santinacci, L., and Schmuki, P., J. Electrochem. Soc. 148, 197 (2001).Google Scholar
6. Djenizian, T., Petite, B., Santinacci, L., and Schmuki, P., Electrochim. Acta 47, 891(2001).Google Scholar
7. Djenizian, T., Santinacci, L., Hildebrand, H., and Schmuki, P., Surf. Sci., in press (2002).Google Scholar
8. Childs, K. D., Carlson, B. A., LaVanier, L. A., Paul, J. F., Stickle, W. F., and Watson, D. G., Handbook of Auger Electron Spectroscopy, Physical Electronics, Inc., Eden Prairie (1995).Google Scholar
9. Weightman, P., Rep. Prog. Phys. 45, 753 (1982).Google Scholar