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Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
A CAMECA IMS-3F secondary ion microscope has been used to investigate the presence of impurities in cast polycrystalline silicon wafers and to determine their lateral distribution. Cesium and oxygen ion bombardment were used to selectively detect potential impurities and extract their lateral distribution with submicron lateral resolution.Images of H, C, O, P, and Cu segregated in grain boundaries have been obtained from polycrystalline silicon.
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- Copyright © Materials Research Society 1982
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