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RRAM electronics and Switching Mechanism

Published online by Cambridge University Press:  01 February 2011

Sheng Teng Hsu  and
TingKai Li
Sheng Teng Hsu
Affiliation:
[email protected], Sharp Laboratories of America, Department 5, 5700 NW Pacific Rim Blvd, Camas, WA, 98607, United States, (360) 834-8698, (360) 834-8689
TingKai Li
Affiliation:
[email protected], Sharp Laboratories of America, Department 5, 5700 NW Pacific Rim Blvd, Camas, WA, 98607, United States
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Abstract

The property of PCMO RRAM memory devices have been studied in terms of electrical pulse width, Pulse polarity, voltage ramping, film thickness, resistivity distribution, and temperature dependent of resistance. The PCMO material is deposited using MOD, PVD, or PLD process. The experimental results clearly indicated the resistance increase is due to localization of valence electrons. The narrow pulse induced resistance increase near the cathode indicated the localization of valence electrons is the effect of high density of excessive non-equilibrium electrons through the well known Jahn-Teller effect. High density of non-equilibrium electrons may also be induced by any other means such as displacement current, space charge limited current, SCLC, and radiation. High field intensity collapses the localized valence electrons and returns the device to the low resistance state. This is the intrinsic property of transition metal oxides. We expect all doped and un-doped transition metal oxides to exhibit resistance switching property.

Keywords

memoryelectronic structurethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I04-01
Copyright
Copyright © Materials Research Society 2007

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