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Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

Kazushi Miki ,
Kunihiro Sakamoto  and
Tsunenori Sakamoto
Kazushi Miki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Kunihiro Sakamoto
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Tsunenori Sakamoto
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
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Abstract

We report the dynamic RHEED (reflection high energy electron diffraction) observation during Ge/Si(001) heteroepitaxy at various growth temperatures. The RHEED intensityanalysis and the in-plane lattice constant analysis reveal a growth fashion and lattice relaxation. Both of them depend strongly on growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 323
Copyright
Copyright © Materials Research Society 1989

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