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A Review of Ntd-Induced Defects in Silicon

Published online by Cambridge University Press:  15 February 2011

J. M. Meese
J. M. Meese*
Affiliation:
University of Missouri Research Reactor, Columbia, Missouri, 65211
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Abstract

Neutron transmutation doping (NTD) has become the preferred method of phosphorus doping of float zone silicon for the Si power device industry. This doping process is accomplished by thermal neutron irradiation in a nuclear reactor. One of the stable isotopes, 30Si, is transmuted to the desired dopant, 31p, by thermal neutron capture and beta decay. This transmuted product becomes electrically active only after suitable annealing of the accompanying radiation damage which is the result of a number of different displacement mechanisms. This paper will present a review of our present understanding of the production and annealing of these displacement defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 225
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Cleland, J. W., Lark-Horowitz, K. and Pigg, J. C., Phys. Rev. 78, 814 (1950).CrossRefGoogle Scholar
2. Lark-Horowitz, K., “Nuclear-bombarded Semiconductors” in Semiconductor Materials, (Butterworths, London, 1951), p. 47.Google Scholar
3. Tanenbaum, M. and Mills, A. D., J. Electrochem. Soc. 108, 171 (1961).CrossRefGoogle Scholar
4. Messier, J., Coroller, Y. le and Flores, J. M., I.E.E.E. Trans. Nuc. Sci. NS–11, 276 (1964).Google Scholar
5. Klahr, C. M. and Cohen, M. S., Nucleonics 22, 62 (1964).Google Scholar
6. Kharchenko, V. A. and Solov'ev, S. P., Izv. Akad. Nauk USSR, Neorgan. Mat. 7, 2137 (1971).Google Scholar
7. Schnöller, M. S., I.E.E.E. Trans. Electron. Devices ED–21, 313 (1974).Google Scholar
8. Platzoder, K. and Lock, K., I.E.E.E. Trans. Electron. Devices ED–23, 805 (1976).Google Scholar
9. Hill, M. J., Van Iseghem, P. M., Zimmerman, W., I.E.E.E. Trans. Electron. Devices ED–23, 809 (1976).Google Scholar
10. Janus, J. M. and Malmros, O. M., I.E.E.E. Trans. Electron. Devices ED–23, 797 (1976).Google Scholar
11. Herrmann, H. A. and Herzer, H., J. Electrochem. Soc. 122, 1568 (1975).CrossRefGoogle Scholar
12. Hass, W. E. and Schnöller, M. S., J. Electronic Mat. 5, 57 (1976).CrossRefGoogle Scholar
13. Semiconductor Silicon 1977, ed. by Huff, H. R. and Sirtl, E. (The Electrochemical Society Proceedings, vol. 77–2, Princeton, 1977), Chapter 3.Google Scholar
14. Neutron Transmutation Doping in Semiconductors, ed. by Meese, J. M. (Plenum Press, N.Y., 1979).CrossRefGoogle Scholar
15. Proceedings of the Third International Conference on NTD-Si, ed. by Guldberg, J. (Plenum Press, N.Y., in press).Google Scholar
16. Meese, J. M., Cowan, D. L. and Chandrasekhar, M., I.E.E.E. Trans. Nuc. Sci. NS–26, 4858 (1979).Google Scholar
17. Malmros, O., Ref. 14, p. 249.Google Scholar
18. Schulz, M. and Lefèvre, H., Ref. 13. p. 142.Google Scholar
19. Cleland, J. W., Fleming, P. H., Westbrook, R. D., Wood, R. F. and Young, R. T., Ref. 14, p. 261.Google Scholar
20. Meyer, J. W., Erikson, L. and Davies, J. A., Ion Implantation in Semiconductors, (Academic Press, New York, 1970) pp. 116–118.Google Scholar
21. Stein, H. J., Ref. 14, p. 229.Google Scholar
22. Coltman, R. R. Jr., Klabunde, C. E., McDonald, D. L., Redman, J. K., J. Appl. Phys. 33, 3509 (1962);CrossRefGoogle Scholar
Coltman, R. R., Klabunde, C. E., Redman, J. K., Phys. Rev. 156, 715 (1967).CrossRefGoogle Scholar
23. Chukichev, M. V. and Vavilov, V. S., Sov. Phys. Solid State 3, 1103 (1961).Google Scholar
24. Odette, G. R. and Dorian, D. R., Nucl. Technol. 29, 346 (1976).CrossRefGoogle Scholar
25. Parkin, D. M. and Goland, A. N., Rad. Effects 28, 31 (1976).CrossRefGoogle Scholar
26. Robinson, M. T., in Nuclear Fusion Reactors (British Nuclear Energy Society, London, 1970), p. 364.Google Scholar
27. Kinchin, G. H. and Pease, R. S., Rep. Prog. Phys. 18, 1 (1955).CrossRefGoogle Scholar
28. Olander, D. R., Fundamental Aspects of Nuclear Reactor Fuel Elements, TID-26711-P1, (Technical Information Center, ERDA, Washington, D.C., 1976) Chapter 17.CrossRefGoogle Scholar
29. Harries, D. R., Barton, P. J. and Wright, S. B., in Symposium on Radiation Effects on Metals and Neutron Dosimetry, A.S.T.M. Special Tech. Pub. No. 341 (A.S.T.M., Philadelphia), p. 276.Google Scholar
30. Measuring Neutron Flux by Radioactivation Techniques, A.S.T.M. Designation E261–70 (A.S.T.M., Philadelphia).Google Scholar
31. Valente, F. A., A Manual of Experiments in Reactor Physics, (Macmillan Co., N.Y., 1963) p. 69.Google Scholar
32. Handbook on Nuclear Activation Cross-sections, Tech. Reports Series 156 (I.A.E.A., Vienna, 1974), p. 17.Google Scholar
33. The displacement cross section for Si as a function of neutron energy was obtained from Greenwood, L. R., Chemical Engineering Div., Argonne National Laboratory and is based on the methods of Ref. 24.Google Scholar
34. Glairon, P. J. and Meese, J. M., Ref. 14, p. 291.Google Scholar
35. Meese, J. M., Chandrasekhar, M., Cowan, D. L., Chang, S. L., Yousif, H., Chandrasekhar, H. R. and McGrail, P., Ref. 15.Google Scholar
36. Cheng, L. J., Corelli, J. C., Corbett, J. W., Watkins, G. D., Phys. Rev. 152, 761 (1966).CrossRefGoogle Scholar
37. Corbett, J. W., Watkins, G. D., Chrenko, R. M., McDonald, R. S., Phys. Rev. 121, 1015 (1961).CrossRefGoogle Scholar
38. Larson, B. C., Young, R. T. and Narayan, J., Ref. 14, p. 281.Google Scholar
39. Watkins, G. D. and Corbett, J. W., Phys. Rev. 134, A1359 (1964).CrossRefGoogle Scholar
40. Lee, Young-Hoon and Corbett, J. W., Phys. Rev. B8, 2810 (1973).CrossRefGoogle Scholar
41. Jung, W. and Newell, G. S., Phys. Rev. 132, 648 (1963).CrossRefGoogle Scholar
42. Katz, L. and Hale, E. B., Ref. 14, p. 307.Google Scholar
43. Lee, Y. H., Gerasimenko, N. N. and Corbett, J. W., Phys. Rev. B14, 4506 (1976).CrossRefGoogle Scholar
44. Lee, Y. H., Kim, Y. M. and Corbett, J. W., Rad. Effects 15, 77 (1972).CrossRefGoogle Scholar
45. Kirk, M. A. and Greenwood, L. R., Ref. 14, p. 143.Google Scholar
46. Brinkman, J. A., J. Appl. Phys. 25, 961 (1954).CrossRefGoogle Scholar
47. Brodsky, H. M., Light Scattering in Solids, ed. by Cardona, M., (Springer-Verlag, 1975) p. 208 and references therein.Google Scholar
48. Guldberg, J., J. Phys. D11, 2043 (1978).Google Scholar
49. Baliga, B. J. and Evwaraye, A. O., Ref. 14, p. 317.Google Scholar
50. Corbett, J. W., Bourgoin, J. C., Chang, L. C., Corelli, J. C., Lee, Y. H., Mooney, P. M. and Weigel, C., Radiation Effects in Semiconductors 1976, ed. by Urli, N. B. and Corbett, J. W., (Institute of Physics, Bristol, 1977), p. 1.Google Scholar
51. Kimerling, L. C., Ibid., p. 221.Google Scholar