Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-16T08:11:27.540Z Has data issue: false hasContentIssue false
  • English
  • Français

A Reversible Effect of Rapid Thermal Annealing of Indium in Ion Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

L. Y. Krasnobaev  and
J. J. Cuomo
L. Y. Krasnobaev
Affiliation:
Department of Materials Science and Engineering of the North Carolina State University, Box 7907, Raleigh, NC 27695–7907, [email protected]
J. J. Cuomo
Affiliation:
Department of Materials Science and Engineering of the North Carolina State University, Box 7907, Raleigh, NC 27695–7907, [email protected]
Get access

Abstract

Si was implanted with 115In+ ions with a dose exceeding the value of the In solid solubility. Rapid thermal annealing with W-halogen lamp was done sequentially with the wafer facing in two different positions relative to the source of the light irradiation. It has been experimentally found that short and long wavelength components of incoherent light act in a different manner on the In atom activation in Si during RTA process. The effect of In activation and deactivation caused by the RTA treatment is reversible in the temperature region of 440–1020°C. The effect of In activation and deactivation exists after thirty RTA pulses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 335
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Révész, P., Farkas, Gy. and Gyulai, J., Radiation Effects. 47, 149 (1980).Google Scholar
2. Narayan, J., Holland, O.H., Eby, R.E., Wortman, J.Y., Ozguz, V., Rozgonyi, G.A., Appl. Phys. Lett. 43, 957 (1983).Google Scholar
3. Peter, C.R., de Souza, J.P., Hasenack, C.M., J. Appl. Phys. 64, 2696 (1988).Google Scholar
4. Mavoory, J., Singh, R., Narayanan, S., Chaudhuri, J., Appl. Phys. Lett. 65, 1935 (1994).Google Scholar
5. Singh, R., Mavoori, J., Thakur, R.P.S., Narayanan, S. in Rapid Thermal and Integrated Processing III, edited by Wortman, J.J. (Mater. Res. Soc. Proc. 342, Pittsburgh, PA, 1994) pp. 437–443.Google Scholar
6. Singh, R., J. Appl. Phys. 63, R59 (1988).Google Scholar
7. Singh, R., Sinha, S., Thakur, R.P.S., Hsuin, N.J. in Rapid Thermal and Integrated Processing, edited by Gelpey, C. (Mater. Res. Soc. Proc. 224, Pittsburgh, PA, 1991) pp. 197–202.Google Scholar
8. Hill, C., Jones, S., Boys, D., Reduced Thermal Processing for ULSI. edited by Levy, R.A. (NATO ASI Series B: Physics 207, N.Y., 1989) pp. 143–180.Google Scholar
9. Trumbore, F.A., Bell Syst. Tech. J. 39, 205 (1960).Google Scholar