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Real Time Analysis of Magnetron-Sputtered Thin-Film CdTe by Multichannel Spectroscopic Ellipsometry

Published online by Cambridge University Press:  01 February 2011

Jian Li ,
Jie Chen ,
J. A. Zapien ,
N. J. Podraza ,
Chi Chen ,
J. Drayton ,
A. Vasko ,
A. Gupta ,
S. L. Wang  and
R. W. Collins
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Jian Li
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
Jie Chen
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
J. A. Zapien
Affiliation:
The City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR
N. J. Podraza
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
Chi Chen
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
J. Drayton
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
A. Vasko
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
A. Gupta
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
S. L. Wang
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
R. W. Collins
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
A. D. Compaan
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, OH 43606
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Abstract

Real time spectroscopic ellipsometry (RTSE) based on rotating-compensator modulation and multichannel detection has been implemented to characterize polycrystalline thin film CdTe deposition for photovoltaic applications. RTSE is capable of providing routine deposition information on substrate temperature T and deposition rate. It is also capable of providing detailed information on the thickness evolution of microstructure and optical properties. In this study, we highlight the differences in nucleation that occur under different CdTe deposition conditions on smooth crystalline Si wafer substrates. Differing behavior in the initial stages of deposition has been observed, ranging from layer-by-layer growth to nucleation and coalescence of 45 Å thick clusters. We also consider the thickness and substrate dependence of the microstructure, comparing depositions on smooth Si wafer and rough thin film Mo substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F1.2
Copyright
Copyright © Materials Research Society 2005

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References

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