Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-12T09:48:11.044Z Has data issue: false hasContentIssue false
  • English
  • Français

Rapid Thermal Processing of Hydrogen Silsesquioxane for Low Dielectric Constant Performance

Published online by Cambridge University Press:  10 February 2011

J. N. Bremmer ,
D. Gray ,
Y. Liu ,
K. Gruszynski  and
S. Marcus
J. N. Bremmer
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
D. Gray
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
Y. Liu
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
K. Gruszynski
Affiliation:
Dow Coming Corporation, M/S CO41A1, P.O. Box 944, Midland, MI 48686
S. Marcus
Affiliation:
STEAG Electronic Systems USA, 7755 S. Research Dr., Tempe, AZ 85284
Get access

Abstract

Low dielectric constant hydrogen silsesquioxane films were achieved by rapid thermal cure processing with production viable equipment. A reduced dielectric constant of k = 2.5–2.6 is demonstrated by optimizing rapid thermal cure process conditions to produce low density hydrogen silsesquioxane thin films. This is a significant reduction relative to production proven furnace cure processed hydrogen silsesquioxane with k = 2.9. Concurrent with reduced k performance is a characteristic film expansion which contributes to formation of a low density structure. A mechanism for film expansion and relevance to low k performance is described; and issues relative to integration of rapid thermal processed low k hydrogen silsesquioxane are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 273
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Liu, Y., Chung, K., Saha, C., Liou, H., Spaulding, M., Pretzer, J., Bremmer, J., Proceedings of 1998 DUMIC, Santa Clara, CA, pp. 155–158.Google Scholar
2. Bremmer, J., Liu, Y., Gruszynski, K., Dall, F., Proc. of Mat. Res. Society 476, 37, (1997).10.1557/PROC-476-37Google Scholar
3. Belot, V., Corriu, R., Leclercq, D., Mutin, P., Vioux, A., Chem. Mater., 3, 127, (1991).10.1021/cm00013a029Google Scholar
4. Liou, H., Pretzer, J., Thin Solid Films, 335, 186, (1998).10.1016/S0040-6090(98)00881-5Google Scholar
5. Enns, J., Gillham, J., Journal of Applied Polymer Science, 28, 2831, (1983).10.1002/app.1983.070280914Google Scholar