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Radiation-Induced Deep-Level Traps in CCD Image Sensors

Published online by Cambridge University Press:  01 February 2011

Cristian Tivarus  and
William C. McColgin
Cristian Tivarus
Affiliation:
[email protected], Eastman Kodak Company, Image Sensor Solutions, 1999 Lake Avenue, Rochester, NY, 14650-2008, United States, 585-477-8957, 585-477-5952
William C. McColgin
Affiliation:
[email protected], Eastman Kodak Company, 1999 Lake Avenue, Rochester, NY, 14650-2008, United States
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Abstract

Dark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.

Keywords

defectssensorradiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F12-07
Copyright
Copyright © Materials Research Society 2007

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