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Pulsed Ion Beam Annealing Of Nickel Thin Films on Silicon

Published online by Cambridge University Press:  15 February 2011

L.J. Chen ,
L.S. Hung ,
J.W. Mayer  and
J.E.E. Baglin
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J.E.E. Baglin
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

High power pulsed ion beams have been applied to anneal nickel thin films on silicon. RBS and TEM have been performed to study ion beam induced effects. With Ba+ ion beams at energy densities greater than 0.7 J/cm2 and H+ beams above about 1.3 J/cm2, cellular structures were found. At about 0.6 J/cm2 for Ba+ (about 1.0 J/cm2 for H+), epitaxial NiSi2 was formed. At lower energy densities, polycrystalline layers containing a mixture of silicide phases were observed. With ion beam annealing, melting starts at the Ni/Si interface and epitaxy was found at energy densities well below that required to melt Ni or crystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 319
Copyright
Copyright © Materials Research Society 1982

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Footnotes

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Permanent address: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, China.

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Permanent address: Institute for Nuclear Study, Shanghai, China.

References

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