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Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

Published online by Cambridge University Press:  01 February 2011

Shinsuke Miyajima ,
Akira Yamada  and
Makoto Konagai
Shinsuke Miyajima
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9,O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan, +81-3-5734-2662, +81-3-5734-2897
Akira Yamada
Affiliation:
[email protected], Tokyo Institute of Technology, Quantum Nanoelectronics Research Center, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan
Makoto Konagai
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Physical Electronics, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo, N/A, 152-8552, Japan
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Abstract

We have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthalloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A04-01
Copyright
Copyright © Materials Research Society 2006

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