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Properties of Hydrogenated Amorphous Silicon-Germanium Alloys Deposited by Dual Target Reactive Magnetron Sputtering

Published online by Cambridge University Press:  07 June 2012

Samuel J. Levang  and
James R. Doyle
Samuel J. Levang
Affiliation:
Department of Physics and Astronomy, Macalester College, St. Paul, MN 55105 U.S.A.
James R. Doyle
Affiliation:
Department of Physics and Astronomy, Macalester College, St. Paul, MN 55105 U.S.A.
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Abstract

Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using rf excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 5000 between 150 and 200 °C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio of H bonded to silicon to that bonded to germanium. The PA shows a systematic increase with increasing temperature, independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality will be discussed.

Keywords

amorphoussputteringSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 301 - 306
Copyright
Copyright © Materials Research Society 2012

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