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Processing of Y1Ba2Cu3O7−x Superconducting Thin Films on GaAs Substrates with Double Buffer Layers

Published online by Cambridge University Press:  28 February 2011

Sang Yeol Lee ,
Quanxi Jia ,
Wayne A. Anderson  and
David T. Shaw
Sang Yeol Lee
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, NY 14260.
Quanxi Jia
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, NY 14260.
Wayne A. Anderson
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, NY 14260.
David T. Shaw
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, NY 14260.
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Abstract

High temperature superconducting Y1Ba2Cu3O7−x(YBCO) thin films have been grown on GaAs substrates by in situ laser deposition with a double buffer layer of yttrium-stabilized ZrO2(YSZ)/Si3N4. A barrier layer using a combination of YSZ/Si3N4 was used to grow high quality YBCO thin films without the degradation of the GaAs during YBCO film deposition. Strongly c-axis oriented superconducting YBCO thin films with a zero resistance temperature of 85.5 K and a critical current density of 1.9×103 A/cm2 at 77 K have been obtained. The electrical properties of the YBCO thin films were mainly dependent on YSZ buffer layer deposition condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 855
Copyright
Copyright © Materials Research Society 1992

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References

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