Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-24T17:35:01.885Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of High-Quality Ultra-Thin Gate Dielectrics by Cat-CVD and Catalytic Anneal

Published online by Cambridge University Press:  15 February 2011

Hidekazu Satot ,
Akira Izumit  and
Hideki Matsumura
Hidekazu Satot
Affiliation:
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, Japan Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, [email protected]
Akira Izumit
Affiliation:
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Hideki Matsumura
Affiliation:
Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Get access

Abstract

This paper reports a feasibility of Cat-CVD system for improvement in characteristics of ultra thin gate dielectrics. Particularly, the effects of post deposition catalytic anneal (Catanneal) by using hydrogen (H2)-decomposed species or NH3-decomposed species produced by catalytic cracking of H2 or NH3, are investigated. The C-V characteristics are measured by MIS diode for the 4.5nm-thick Cat-CVD SiNx and 8nm-thick sputtered SiO2 for comparison. The small hysteresis loop is seen in the C-V curve of both SiNx and SiO2 films as deposition. However, it is improved by the Cat-anneal using H2 or NH3, and the hysteresis loop completely disappears from the C-V curves for both films. This result demonstrates that the Cat-anneal is a powerful technique to improve quality of insulating films, such as Cat-CVD SiNx and even sputtered SiO2 films. In addition, the leakage current of SiNx, films with 2.8nm equivalent oxide thickness is decreased by several orders of magnitude than that of the conventional thermal SiO2 of similar EOT and the breakdown field is increased several MV/cm by Cat-anneal at 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 121
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Saito, Y., Sekine, K., Hirayama, M. and Ohmi, T., Ext. Abst. SSDM (1998) pp.24–25.Google Scholar
2 Matsumura, H. and Tachibana, H., Appl. Phys. Lett. 47, 833 (1985).Google Scholar
3 Matsumura, H., Jpn. J. Appl. Phys. 37, 3175 (1998).Google Scholar
4 Okada, S. and Matsumura, H., Jpn. J. Appl. Phys. 36, 7035 (1997).Google Scholar
5 Izumi, A. and Matsumura, H., Appl. Phys. Lett. 71, 1371 (1997).Google Scholar
6 Izumi, A., Masuda, A. and Matsumura, H., Thin Solid Films, 343–344, 528 (1999).Google Scholar
7 Ma, T. P., IEEE Trans. Electron Devices, 45, 680 (1998).Google Scholar