Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T15:55:49.194Z Has data issue: false hasContentIssue false

Preparation and Nanoindentating mechanical Analyses of Porous SiO2 Low-Dielectric-Constant Films

Published online by Cambridge University Press:  26 February 2011

Shou-Yi Chang
Affiliation:
[email protected], National Chung Hsing University, Department of Materials Engineering, 250 Kuo Kuang Rd., Taichung, Taiwan, 402, Taiwan, +886-4-22857517, +886-4-22857017
Yi-Chung Huang
Affiliation:
[email protected], National Chung Hsing University, Department of Materials Engineering, Taiwan
Bo-Kang Yang
Affiliation:
[email protected], National Chung Hsing University, Department of Materials Engineering, Taiwan
Get access

Abstract

Porous SiO2 low-dielectric-constant films containing different porosities and sizes of pores were prepared in this study. Their mechanical properties were analyzed by a nanoindentation test. The hardness and elastic modulus of the films prepared with an ethanol molar ratio of 3 and an aging time of 16 hours reached maximum values of 2.4 and 40 GPa, respectively. With a higher ethanol ratio, the porosity increased, and the mechanical properties consequently decreased. With increasing aging time, the mechanical properties increased and then dropped due to enlarged pore sizes. The porous SiO2 films were found to yield at an ultimate stress of 3.1 GPa, and the maximum fracture energy release rate was calculated as 3.4 J/m2. The deformation and fracture behavior was observed through crack initiation and propagation along the large amount of pores.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Homma, T., Mater. Sci. Eng. R-Rep. R 23, 243 (1998).Google Scholar
2 Maex, K., Baklanov, M.R., Shamiryan, D., Lacopi, F., Brongersma, S.H., and Yanovitskaya, Z.S., J. Appl. Phys. 93, 8793 (2003).Google Scholar
3 Chang, S.Y., Chou, T.J., Lu, Y.C., Jang, S.M., Lin, S.J., Liang, M.S., J. Electrochem. Soc. 151, F146 (2004).Google Scholar
4 Chang, S.Y., Jang, S.M., Lin, S.J, Liang, M.S., Thin Solid Films 466, 54 (2004).Google Scholar
5 Jo, M.H., Park, hH., Kim, D.J., Hyun, S.H., Choi, S.Y, and Paik, J.T., J. Appl. Phys. 82, 1299 (1997).Google Scholar
6 Freund, L.B. and Suresh, S., Thin Film Materials – Stress, Defect Formation and Surface Evaluation (Cambridge University Press, New York, 2003).Google Scholar
7 Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
8 Fischer-Cripps, A.C., Nanoindentation, (Springer, New York, 2002).Google Scholar
9 Volinsky, A.A., Vella, J.B., and Gerberich, W.W., Thin Solid Films 429, 201 (2003).Google Scholar
10 Chang, S.Y., Chang, H.L., Lu, Y.C., Jang, S.M., Lin, S.J., Liang, M.S., Thin Solid Films 460, 167 (2004).Google Scholar
11 Chang, S.Y., Chang, T.Q., and Lee, Y.S., J. Electrochem. Soc. 10, C657 (2005).Google Scholar
12 Socrates, G., Infrared Characteristics Group Frequencies, (Wiley, New York, NY, 1980).Google Scholar
13 Chawla, K.K., Composites Materials: Science and Engineering, 2nd ed., (Springer-Verlag, New York, 1987), pp. 303346.Google Scholar
14 Gouldstone, A., Koh, H.J., Zeng, K.Y., Giannakopoulos, A.E., Suresh, S., Acta Mater. 48, 2277 (2000).Google Scholar
15 Benayoun, S., Fouilland-Paillé, L., and Hantzpergue, J.J., Thin Solid Films 352, 156 (1999).Google Scholar