Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T21:38:24.011Z Has data issue: false hasContentIssue false

Preparation and Characterization of Pb(Zr,Ti)O3 films prepared by a modified sol-gel route

Published online by Cambridge University Press:  18 May 2012

Dan Jiang
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
Chen Zhao
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
Shundong Bu
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
Jinrong Cheng*
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
Get access

Abstract

Pb(Zr0.53Ti0.47)O3 (PZT) films have been fabricated on stainless steel substrates by a Polyvinylpirrolidone (PVP) modified sol-gel route. The single layer of about 0.26 μm was achieved by using the PVP-modified PZT sol, and Crack-free PZT films with thickness of up to 2.37 μm were fabricated by repeating the deposition process. The variations in crystallite orientation, microstructure, dielectric and ferroelectric properties of PZT films were investigated as a function of film thickness. Our results indicate that PZT films prepared on stainless steel substrates maintain good dielectric and ferroelectric properties.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

[1] Willeng, B., Kohli, M., Brooks, K., Muralt, P. and Setter, N., J.Ferroelectrics 201, 147(1997).Google Scholar
[2] Zhou, Z.H., Xue, J.M., Li, W.Z., Wang, , Zhu, H., and Miao, J.M., J.Appl.Phys. 96, 5706 (2004).Google Scholar
[3] Tu, Y.L. and Milne, S.J., “Processing and Characterization of Pb(Zr, Ti)O3 Films up to 10 μm Thick, Produced from a Diol Sol-Gel Route, ” J. Mater. Res. 11, 2556 (1996).Google Scholar
[4] Baba, So, Tsuda, Hiroki, and Akedo, Jun J.IEEE Transactions on ultrasonics, ferroelectrics, and frequency control, Vol. 55, NO.5, May 2008.Google Scholar
[5] Park, Jae-Hyuk, JunAkedo, , HarumichiSato, , J. Sensors and Actuators A 135, 86 (2007).Google Scholar
[6] Cheng, Jinrong, He, Liang, Che, Lingjuan, Meng, Zhongyan, J. Thin Solid Films 515, 2398 (2006)Google Scholar
[7] Yamano, Akihiro and Kozuka, Hiromitsu, J.Am.Ceram. Soc, 90, 3882 (2007).Google Scholar
[8] Park, Gun-Tae, Choi, Jong-Jin, Park, Chee-Sung, Lee, Jae-Wung, and Kim, Hyoun-Ee, Applied Physics Letters, volume 85, Number 1220 September 2004.Google Scholar
[9] Kozuka, H., Kajimura, M., Hirano, T., and Katayama, K.: Crack-free, thick ceramic coating films via non-repetitive dip-coating using polyvinylpyrrolidone as stress-relaxing agent. J. Sol.-Gel Sci.Technol. 19, 205 (2000).Google Scholar
[10] Takenaka, S. and Kozuka, H.: Sol-gel preparation of single-layer, 0.75 μm thick lead zirconate titanate films from lead nitrate-tita-nium and zirconium alkoxide solutions containing polyvinylpyrrolidone. Appl.Phys.Lett. 79, 3485 (2001).Google Scholar
[11] Kozuka, H., “Stress Evolution on Gel-to-Ceramic Thin Film Conversion,” J.Sol-Gel Sci.Techn, 40, 287 (2006)Google Scholar
[12] Hiromitsukozuka, , Masahirokajimura, et al. . Crack-Free thick Ceramic Coating Films via Non-Repetitive Dip-Coating Using Polyvinylpyrrolidone as Stress-Relaxing Agent, Journal of Sol-Gel Science and Technology 19, 205, 200.Google Scholar
[13] Alkoy, Mensur, Alkoy, Sedat, and Shiosaki, Tadashi, Effects of Ce, Cr and Er Doping and Annealing Conditions on the Microstructural Features and Electrical Properties of PbZrO3 Thin films prepared by Sol-Gel Process. Japan J. Appl. Phys. 44, 6654 (2005)Google Scholar
[14] Du, H., Zhang, T.S., and Ma, J., Effect of polyvinylpyrrolidone on the formation of perovskite phase and rosette-like structure in sol-gel-derive PLZT films, J.Mater.Res, Vol. 22, No.8, Aug 2007.Google Scholar
[15] Xu, F., Trolier-McKinstry, S., Ren, W., Xu, Baomin, Xie, Z.-L. et al. . J.Appl. Phys. 89, 1336 (2001).Google Scholar
[16] de la Cruz, Perez, Joanni, E., Vilainho, P. M., and Kholkin, A.L., J.Appl. Phys. 108, 1141 (2010).Google Scholar