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Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia

Published online by Cambridge University Press:  26 February 2011

Robert Grynszpan ,
G. Brauer  and
W. Anwand
Robert Grynszpan
Affiliation:
[email protected], DGA-DCE-CTA-LOT, 16 bis Av. Pr. de la Côte d’Or, Arcueil, ., 94114 Arcueil, France
G. Brauer
Affiliation:
[email protected]
W. Anwand
Affiliation:
[email protected]
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Abstract

Implantation with a variety of sub-MeV ions (He, Ar, Xe, O, and I) were performed on cubic single crystals of yttria-stabilized zirconia in order to assess the capability of such material to withstand high fluences as a confinement matrix for nuclear waste. In this work, we confronted the results of both Doppler Broadening using slow positron implantation spectroscopy (DB-SPIS) and the Rutherford Backscattering/Channeling spectroscopy (RBS-C) which are sensitive to lattice defects almost opposite in nature. In spite of their difference in defect specific sensitivity, and except for a precursory damage production stage almost exclusively exhibited by SPIS for very low doses (< 0.1 dpa), either techniques show a similar fluence dependence, which exhibits 3 stages starting respectively around 0.1, 2 and 3 dpa, regardless of the damaging ion. However, owing to the stage I plateau displayed in the variation of the DB-SPIS lineshape parameter, we were able to estimate an ion-mass dependence of the critical size of open-volume defects reached before the production of new predominant defects.

Keywords

ZrOion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO10-01
Copyright
Copyright © Materials Research Society 2006

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References

[1] Degueldre, C., Paratte, J.M., J. Nucl. Mater. 274, 1 (1999).Google Scholar
[2] Yasuda, K., Kinoshita, C., Matsurama, S., Ryazanov, A.I., J. Nucl. Mater. 319, 74 (2003)Google Scholar
[3] Coleman, P.G. (Edit.), “Positron Beams and their Applications”, World Scientific-Singapore, 2000, pp. 1–325.Google Scholar
[4] Fradin, J., Grynszpan, R.I., Thomé, L., Anwand, W., Brauer, G., Nucl. Instr. Meth. B 175, 516 (2001).Google Scholar
[5] Costantini, J.M., Beuneu, F., Grynszpan, R.I., Trautmann, C., Nucl. Instr. Meth. B 191, 616 (2002).Google Scholar
[6] Grynszpan, R.I., Saudé, S., Anwand, W., Brauer, G., Nucl. Instr. Meth. B 241, 526 (2005).Google Scholar
[7] Anwand, W., Kissener, H.R., Brauer, G., Acta Phys. Pol. A 88, 7 (1995).Google Scholar
[8] Coleman, P.G., Kuna, S., Grynszpan, R.I., Mater. Sci. Forum, 255, 668 (1997).Google Scholar
[9] Veen, A.van, Schut, H., de Vries, J., Hakvoort, A., Ijpma, M. R., in Positron Beams for Solids and Surfaces, ed. Shultz, P.J., et al. , AIP Conf. Proc., NY 218 (1990) 171.Google Scholar
[10] Asoka-Kumar, P., Lynn, K. G., Welch, D. G., J. Appl. Phys. 76, 4035 (1994).Google Scholar
[11] Brauer, G., Anwand, W., Nicht, E.-M., Kuriplach, J., I.Prochazka, Becvar, F., Osipowicz, A., Coleman, P.G., Phys.Rev.B 62, 5199 (2000).Google Scholar
[12] Wang, Z., Chen, Z.Q., Zhu, J., Wang, S.J., Guo, X., Rad. Phys. Chem. 58, 697 (2000).Google Scholar
[13] Ziegler, J.F., Biersack, J.P., Littmark, U., “The Stopping and Range of Ions in Solids,” Vol. 1, ed. Ziegler, J.F., Pergamon, New York, 1985.Google Scholar
[14] Fradin, J., Thesis ENSAM, Paris, 2002.Google Scholar
[15] Coleman, P.G., Burrows, C.P., Knights, A.P., Appl. Phys. Lett. 80(6), 947 (2002).Google Scholar
[16] Krause-Rehberg, R., Boerner, F., Redmann, F., Gebauer, J., Koegler, R., Kliemann, R., Skorupa, W., Egger, W., Koegel, G., Triftshaeuser, W., Physica B 308, 443 (2001).Google Scholar
[17] Heinig, K.H., Jaeger, H.U., in Proc. 1st ENDEASD Meeting, IMEC, Leuven, 1999, p. 297.Google Scholar
[18] Valkealathi, S., Nieminen, R.M., Appl. Phys. A 35, 51 (1984).Google Scholar
[19] Sickafus, K.E., Matzke, Hj., Hartmann, Th., Yasuda, K., Valdez, J.A., Chodak, P. III, Nastasi, M., Verrall, R.A., J. Nucl. Mater., 274, 66 (1999).Google Scholar
[20] Gibbons, J.F., Proc. IEEE, 60, 1062 (1972).Google Scholar
[21] Saudé, S., Grynszpan, R.I., Anwand, W., Brauer, G., Grob, J.J., Le Gall, Y., Nucl. Instr. Meth. B 216, 156 (2004).Google Scholar
[22] Fleischer, E.L., Norton, M.G., Zaleski, M.A., Hertl, W., Carter, C.B., Mayer, J.W., J. Mater. Res. 6(9), 1905 (1991).Google Scholar
[23] Falub, C.V., Eijt, S.W.H., van Veen, A., Mijnarends, P.E., Schut, H., Mater. Sci. Forum, 363, 561 (2001).Google Scholar
[24] Asoka-Kumar, P., Alatalo, M., Ghosh, V J, Kruserman, A.C., Nielsn, B., Lynn, K.G., Phys. Rev. Lett. 77, 2097 (1996).Google Scholar
[25] Saudé, S., Grynszpan, R.I., Anwand, W., Brauer, G., J. Alloys and Comp. 382, 252 (2004).Google Scholar
[26] Hakvoort, R. A., van Veen, A., Mijnarends, P.E., Schut, H., Appl. Surf. Sci. 85, 271 (1995).Google Scholar