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Polycrystalline Silicon Grown on Porous Silicon-on-Insulator Substrates

Published online by Cambridge University Press:  15 February 2011

Klaus Y.J. Hsu ,
C. H. Lee  and
C. C. Yeh
Klaus Y.J. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C., FAX: +886–3–571–5971, E-MAIL: [email protected]
C. H. Lee
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C., FAX: +886–3–571–5971, E-MAIL: [email protected]
C. C. Yeh
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C., FAX: +886–3–571–5971, E-MAIL: [email protected]
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Abstract

Inexpensive full-wafer SOI substrates are appealing for various applications such as ULSI. As an attempt to achieve this goal, low-temperature deposition of silicon on novel porous Si-on-insulator (PSOI) substrates was performed in this work. The bottom insulator was obtained by anodically oxidizing a pre-formed porous silicon film in HCl solution. The thickness, uniformity and quality of the resulted bottom oxide layer as well as the residual porous silicon layer above were well-controlled. Low-temperature PECVD growth of silicon on the PSOI wafer was conducted by using the residual porous silicon as the seed. Cross-sectional TEM pictures and electron diffraction patterns showed that poly-Si films were formed on PSOI substrates under the conditions of 98% hydrogen dilution ratio, 20 Watts RF power, and 300°C substrate temperature. Further thermal annealing at 1050°C for 30 minutes significantly enhanced the crystallinity of the deposited films. Combined with the excellent insulation ability of the bottom oxide, the technique is suitable for future inexpensive full-wafer SOI fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1007
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Imai, K. et al. ., IEEE Trans. Electron. Dev. ED 31 (1984), p.297–302.Google Scholar
2.Tsao, S.S. et al. ., J. Appl. Phys. 62 (1987), p.4182–4186.Google Scholar
3.Holmstrom, R.P. et al. ., Appl. Phys. Lett. 42 (1983), p.386–388.Google Scholar
4.Arnaud D'Avitaya, F. et al. ., 1st Intern. Symp. on MBE, Toronto, Canada, Extended Abstracts (1985), p.323–334.Google Scholar
5.Beale, M.I.J. et al. ., J. Vac. Sci. Tech. B3 (1985), p.732–735.Google Scholar
6.Bomchil, G. et al. ., Appl. Surf. Sci. 41/42 (1989), p.604–613.Google Scholar
7.Lee, C.H., Yeh, C.C., and Hsu, Klaus Y.J., Appl. Surf. Sci. 92 (1996), p.621–625.Google Scholar
8.Sato, Nobuhiko et al. ., J. Electrochem. Soc. 142 (1995), p.3116.Google Scholar