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Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions
Published online by Cambridge University Press: 15 February 2011
Abstract
A point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.
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- Copyright © Materials Research Society 1995