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Photochemical Lamination of Low Refractive Index Transparent SiO2 Film at Room Temperature for Antireflection Coating

Published online by Cambridge University Press:  11 February 2011

Y. Ogawa
Affiliation:
Department of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259–12, Japan
M. Murahara
Affiliation:
Department of Electrical Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259–12, Japan
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Abstract

A transparent low refractive index SiO2 film laminated on a glass substrate at room temperature by photochemical reactions with the Xe2* excimer lamp (172nm). This SiO2 film grown on the fused silica glass was proved to avoid reflection of light.

A refractive index of the SiO2 film was 1.36. After annealing the film for one hour at 200 degrees centigrade, the refractive index increased to 1.42. The refractive index increased as the F atom density in the SiO 2 film decreased.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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