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Phosphorus Doping of Boron Carbon Alloys

Published online by Cambridge University Press:  15 February 2011

Seong-Don Hwang ,
P. A. Dowben ,
A. Cheeseman ,
J. T. Spencer  and
D. N. Mcilroy
Seong-Don Hwang
Affiliation:
Department of Physics and the Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, Nebraska 68588–0111, [email protected]
P. A. Dowben
Affiliation:
Department of Physics and the Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, Nebraska 68588–0111, [email protected] Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
A. Cheeseman
Affiliation:
Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
J. T. Spencer
Affiliation:
Department of Chemistry and the W.M. Keck Center for Molecular Electronics, Syracuse University, Syracuse, New York 13244–4100, [email protected]
D. N. Mcilroy
Affiliation:
Department of Physics, University of Idaho, Moscow, Idaho 83844–0903, [email protected]
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Abstract

Phosphorus doped boron carbon alloy films were made by chemical vapor deposition from a single source compound, dimeric chloro-phospha(III) carburane ((C2B10H10)2(PCl)2). Phosphorus doped B5C materials exhibit increases in the band gap from 0.9 eV to 2.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1031
Copyright
Copyright © Materials Research Society 1997

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References

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