Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-12T07:56:08.890Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

H. S. Venugopalan ,
S. E. Mohney ,
B. P. Luther ,
J. M. DeLucca ,
S. D. Wolter ,
J. M. Redwing  and
G. E. Bulman
H. S. Venugopalan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
B. P. Luther
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
J. M. DeLucca
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
S. D. Wolter
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
J. M. Redwing
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
G. E. Bulman
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Metallurgical reactions between Ni and GaN have been explored at temperatures between 400 and 900 °C in N2, Ar, and forming gas. A trend of increasing Ga content in the reacted films was observed with increasing temperature. The reactions are consistent with the thermodynamics of the Ni-Ga-N system. Changes in the film morphology on annealing were also examined. Metal island formation and a corresponding deep, non-uniform metal penetration into GaN were observed at high temperatures. The relevance of the observed nature of phase formation and morphology in these thin films to electrical properties of Ni/GaN and Au/Ni/GaN contacts is also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 431
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morkoc, H. and Mohammad, S. N., Science 267, p. 51 (1995).Google Scholar
2. Nakamura, S., Senoh, M., and Mukai, T., Appl. Phys. Lett. 62, p. 2390 (1993).Google Scholar
3. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, p. 2557 (1994).Google Scholar
4. Guo, J. D., Pan, F. M., Feng, M. S., Guo, R. J., Chou, P. F., and Chang, C. Y., J. Appl. Phys. 80, p. 1623 (1996).Google Scholar
5. Bermudez, V. M., Kaplan, R., Khan, M. A. and Kuznia, J. N., Phys. Rev. B. 48, p. 2436 (1993).Google Scholar
6. Mohney, S. E. and Lin, X., J. Electron. Mater. 25, p. 811 (1996).Google Scholar
7. Duxstad, K. J., Halier, E. E., Imler, W. R., Romano, L. T., Yu, K. M., Ponce, F. A., and Steigerwald, D. A., in III-V Nitrides, Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. A. (Eds.) (Mater. Res. Soc. Symp. Proc. 449, 1997).Google Scholar
8. Trexler, J. T., Pearton, S. J., Holloway, P. H., Mier, M. G., Evans, K. R. and Karlinek, R. F., in III-V Nitrides, Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. A. (Eds.) (Mater. Res. Soc. Symp. Proc. 449, 1997).Google Scholar
9. Trexler, J. T., Miller, S. J., Holloway, P. H., and Khan, M. A., in Gallium Nitride and Related Materials, Ponce, F. A., Dupuis, R. D., Nakamura, S., and Edmond, J. A. (Eds.) (Mater. Res. Soc. Symp. Proc. 395, 1996), p. 819.Google Scholar
10. Ishikawa, H., Kobayashi, S., Koide, Y., Yamasaki, S., Nagai, S., Umezaki, J., Koike, M., and Murakami, M., J. Appl. Phys. 81 (3) p. 1315 (1997).Google Scholar
11. Feschotte, P. and Eggimann, P., J. Less-Common. Met. 63, p. 5 (1979).Google Scholar
12. Lee, S. Y. and Nash, P. in Phase Diagrams of Binary-Nickel Alloys, Nash, P. (Ed.), ASTM International, Materials Park, OH, 1991, p. 133.Google Scholar
13. Nakamura, S., in Gallium Nitride and Related Materials, Ponce, F. A., Dupuis, R. D., Nakamura, S., and Edmond, J. A. (Eds.) (Mater. Res. Soc. Symp. Proc. 395, 1996), p. 879.Google Scholar