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Oxidation of the (111) Surface of an Al-Be Alloy: Effect of a BeO Layer

Published online by Cambridge University Press:  25 February 2011

M. Ahmad  and
J. M. Blakely
M. Ahmad
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, N.Y. 14853
J. M. Blakely
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, N.Y. 14853
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Abstract

Growth of a thin BeO layer on the (111) surface of a dilute Al-Be alloy has been studied under oxidizing condition. At 500°C, in the presence of oxygen, Be atoms diffuse to the surface to form BeO. This oxide grows epitaxially with its (0001) basal plane orientation parallel to Al (111). During room temperature oxygen exposure of the AI(111) surface precovered with a BeO layer, it was found that oxygen diffused through the BeO overlayer and formed amorphous Al2O3 at the AI-BeO interface. The thin BeO film remained well ordered even when separated from the substrate by the amorphous layer. The effect of various coverages of BeO on the kinetics of oxidation of Al (111) at room temperature was studied; the influence of the BeO was found to be small in comparison with the case of a polycrystalline sample with predominantly (001) textures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 211
Copyright
Copyright © Materials Research Society 1987

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References

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