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Optical Properties of Ingan/GaN Multi Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

J. P. Bergman ,
N. Saksulv ,
J. Dalfors ,
P. O. Holtz ,
B. Monemar ,
I Akasaki  and
H. Amano
J. P. Bergman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, Sweden
N. Saksulv
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, Sweden
J. Dalfors
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, Sweden
P. O. Holtz
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S–581 83 Linköping, Sweden
I Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

A set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 Å and barrier thickness 60 Å were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 631
Copyright
Copyright © Materials Research Society 1998

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References

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