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Optical Investigations on Donor Doped CdTe

Published online by Cambridge University Press:  26 February 2011

W. Stadler ,
B.K. Meyer ,
D.M. Hofmann ,
D. Sinerius  and
K.W. Benz
W. Stadler
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G.
B.K. Meyer
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G.
D.M. Hofmann
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. Solid State Department, University of Lund, Sweden
D. Sinerius
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. University of Freiburg, Kristallographisches Institut, Hebelstr. 25, 7800 Freiburg, F.R.G.
K.W. Benz
Affiliation:
Phyikdepartment E16, Technichal University of Munich, James Franck Str., 8046 Garching, F.R.G. University of Freiburg, Kristallographisches Institut, Hebelstr. 25, 7800 Freiburg, F.R.G.
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Abstract

The recombination luminescence involving the A-center, a Cd vacancy paired with a nearest neighbour donor, was investigated in CdTe doped with group VII and III elements. Depending on the type of donor doping, distinct differences in the A-center acceptor binding energies and electron phonon couplings are resolved. Optically detected magnetic resonance shows that the A-center behaves as a shallow effective masstype acceptor consiscent with its small binding energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 445
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Agrinskaya, N.V., Arkad'ova, E.N. and Matveev, O.A., Soy. Phys.Semicond. 5 (1971) 762 Google Scholar
[2] Norris, C.B. and Barnes, C.E., Rev, Phys. Appl. 12 (1977) 219 CrossRefGoogle Scholar
[3] Zanio, K. in : Semiconductors and Semimetals, Ed. Willardson, R.K. and Boor, A.C. (Academic Press, N.Y., 1978)Google Scholar
[4] Molva, E. and Si Dang, Le, Phys. Rev. B 27 (1983) 6222 Google Scholar
[5] Dunstan, D.J. and Davies, J.J., J. Phys. C 12 (1979) 2927 Google Scholar
[6] Schneider, J. in : II-VI Semiconducting Compounds, Ed. Thomas, D.G. (Benjamin, W.A., N.Y. 1967) p. 160Google Scholar
[7] Saminadayar, A., Galland, D. and Molva, E., Solid State Comm. 49 (1984) 627 CrossRefGoogle Scholar
[8] Hofmann, D.M. and Meyer, B.K., Phys. Rev.,to be publishedGoogle Scholar