Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-24T13:57:59.336Z Has data issue: false hasContentIssue false

O2 Plasma Treatment of Al Layer on Metal Anode to Improve the Performance of Organic Light-Emitting Devices

Published online by Cambridge University Press:  26 February 2011

Su Hwan Lee
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Dong-Won Shin
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Sung-Jun Kim
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Yoon Ho Kang
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Gon-Sub Lee
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Jea-gun Park
Affiliation:
[email protected], Hanyang University, Electrical & Computer Engineering, #101 HIT, Hanyang University, Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Get access

Abstract

A gold and aluminum layer was investigated as an anode for organic light-emitting devices (OLEDs). By pretreating the ultrathin aluminum layer in an oxygen (O2) plasma, the hole injection from the metal anode to the organic layer was greatly enhanced. The fabricated OLEDs demonstrated improved current density and luminance characteristics as compared with other devices using a gold anode and an aluminum layer not treated with an oxygen plasma.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tang, C. W., VanSlyke, S. A., Appl. Phys. Lett. 51, 913 (1987).Google Scholar
2. Meng, Z., Wong, M., IEEE Trans. Electron Devices 49, 991 (2002).Google Scholar
3. Adachi, C., Tsutsui, T., Saito, S., Appl. Phys. Lett. 55, 1489 (1989).Google Scholar
4. Tang, C. W., VanSlyke, S. A., Chen, C. H., J. Appl. Phys. 85, 3610 (1989).Google Scholar
5. Friend, R. H., Gymer, R. W., Holmes, A. B., Burroughes, J. H., Marks, R. N., Taliani, C., Bradley, D. D. C., Santos, D. A. Dos, Bredas, J. L., Logdlund, M., Salaneck, W. R., Nature (London) 397, 121 (1999).Google Scholar
6. Shi, J., Tang, C. W., Appl. Phys. Lett. 70, 1665 (1997).Google Scholar
7. Kanno, Hiroshi, Sun, Yiru, andForrest, Stephen R., Appl. Phys. Lett. 86, 263502 (2005)Google Scholar
8. So, S. K., Choi, W. K., Cheng, C. H., Leung, L. M., Kwong, C. F., Appl. Phys. A 68, 447 (1999).Google Scholar
9. Reynolds, K. J., Frey, G. L., andFriend, R. H., Appl. Phys. Lett. 82, 1123 (2003)Google Scholar
10. Wu, C. C., Wu, C. I., Sturm, J. C., Kahn, A., Appl. Phys. Lett. 70, 1348 (1997).Google Scholar
11. Kim, J. S., Friend, R. H., Cacialli, F., Appl. Phys. Lett. 74, 3084 (1999).Google Scholar
12. Hung, L. S., Zheng, L. R., Mason, M. G., Appl. Phys. Lett. 78, 673 (2001).Google Scholar
13. Gu, G., Forrest, S. R., IEEE J. Sel. Top. Quantum Electron. 4, 83 (1998).Google Scholar
14. Johson, P. B., Christy, R. W., Phys. Rev. B 6, 4370 (1972).Google Scholar
15. Peng, H., Zhu, X., Sun, J., Xie, Z., Xie, S., Wong, M., Kwok, H. S., Appl. Phys. Lett. 87, 173505 (2005).Google Scholar
16. Michaelson, H. B., IBM J. Res. Dev. 22, 72 (1978).Google Scholar
17. Hung, L. S., Tang, C. W., Mason, M. G., Appl. Phys. Lett. 70, 152 (1997).Google Scholar
18. Parker, I. D., Kim, H. H., Appl. Phys. Lett. 64, 1774 (1994).Google Scholar
19. Osten, H. J., Liu, J. P., Gaworzewski, P., Bugiel, E., Zaumeil, P., Tech. Dig. - Int. Electron Devices Meet. 653 (2002).Google Scholar