Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-09T22:45:59.835Z Has data issue: false hasContentIssue false

Novel Rf-Plasma System for the Synthesis of Ultrafine, Ultrapure Sic and Si3N4

Published online by Cambridge University Press:  15 February 2011

Gerald J. Vogt
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Charles M. Hollabaugh
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Donald E. Hull
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Lawrence R. Newkirk
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
John J. Petrovic
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Get access

Abstract

A novel high-temperature plasma tube has been developed that overcomes the meltdown problem of the conventional water- and gas-cooled quartz plasma tubes commonly used. The key feature of this system is the placement of heavywalled, water-cooled copper fingers inside a quartz mantle to shield the mantle from the intense radiation of the plasma. The copper fingers act as transformers to couple the plasma to the applied rf field.

This system has been used to produce ultrafine, ultrapure silicon carbide powder by reaction of silane and methane. Powder of β-SiC has been obtained with a BET surface area of >160 m2 /g and a particle size range of 10 to 20 nm as measured by TEM. Likewise, powder of silicon nitride has been synthesized by reaction of silane and ammonia in the plasma. The resulting powder is approximately 50% Si3N4 with a mixture of α- and β-polymorphic forms. Boron carbide has also been successfully synthesized from diborane and methane.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hamblyn, S.M.L. and Reuben, B.G., Advances in Inorganic Chemistry and Radiochemistry 17, 89114 (1975).Google Scholar
2. De Pous, O., Mollard, F. and Lux, B., Proc. of the 3rd Int. Sym. on Plasma Chemistry 3, Paper S.4.7. (1977).Google Scholar
3. Salinger, R.M., Ind. Eng. Chem. Prod. Res. Develop. 11, 230231 (1972).Google Scholar
4. Cateloup, J. and Mocellin, A., Special Ceramics 6, 209 (1975).Google Scholar
5. Sayce, I.G. and Selton, B., Special Ceramics 5, 157 (1972).Google Scholar
6. Kong, P.C., Huang, T.T., and Pfender, E., Proc. of the 6th Int. Sym. on Plasma Chemistry 1, 219224 (1983).Google Scholar
7. Stroke, F.G., U.S. Patent 4, 133, 689 (1979).Google Scholar
8. Stroke, F.G., U.S. Patent 4, 295, 890 (1981).Google Scholar
9. Perugini, G., Proc. of the 4th Int. Sym. on Plasma Chemistry 2, 779785 (1979).Google Scholar
10. Yoshida, T., Endo, H., Saito, K., and Akashi, K., Proc. of the 6th Int. Sym. on Plasma Chemistry 1, 225230 (1983).Google Scholar
11. MacKinnon, I.M. and Reuben, B.G., J. Electrochem. Soc. 122, 806811 (1975).Google Scholar
12. Hollabaugh, C.M., Hull, D.E., Newkirk, L.R., and Petrovic, J.J., submitted to J. Mater. Sci. (1983).Google Scholar
13. Hollabaugh, C.M., Hull, D.E., Newkirk, L.R., and Petrovic, J.J., Proc. of Int. Conf. on Ultrastructure Processing of Ceramics, Glasses and Composites (1983).Google Scholar
14. Stephens, J.R. and Kothari, B.K., Moon and Planets 19, 139152 (1978).Google Scholar
15. Shaffer, P.T.B., Mat. Res. Bull. 4, S13S24 (1969);Google Scholar
15a in “Silicon Carbide 1968.”Google Scholar
16. Engineering Property Data On Selected Ceramics. Volume II. Carbides (Metals and Ceramics Information Center, Battelle, Columbus, Ohio, 1979) p. 5.2.3–1.Google Scholar