Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-01-12T02:13:36.719Z Has data issue: false hasContentIssue false
  • English
  • Français

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

Published online by Cambridge University Press:  22 February 2011

S.A. Cohen ,
T.O. Sedgwick  and
J.L. Speidell
S.A. Cohen
Affiliation:
IBM T. J. Watson Research Center Yorktown Heights, New York 10598
T.O. Sedgwick
Affiliation:
IBM T. J. Watson Research Center Yorktown Heights, New York 10598
J.L. Speidell
Affiliation:
IBM T. J. Watson Research Center Yorktown Heights, New York 10598
Get access

Abstract

Accurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 321
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Sedgwick, T.O., J. Electrochem. Soc. 130, 484 (1983).Google Scholar
2.Nishiyama, K., Arai, M. and Watanabe, N., Jap. J. Appl. Phys. 19, L563 (1980).Google Scholar
3.Seidel, T.E., IEEE Electron Device Letts. EDL–4, 353 (1983).Google Scholar
4.Fair, R.B., Wortman, J.J. and Lin, J., to be presented at IEDM 1983.Google Scholar
5.Borisenko, V.E. and Nylandsted Larsen, A., Appl. Phys. Lett. 43, 582 (1983).Google Scholar
6.Harrison, H.B., Grigg, M., Short, K.T., Williams, J.S. and Zylewicz, A., in “Laser and Electron Beam Interactions with Solids”, Appleton, B.R. and Celler, G.K., eds., Vol. 4, p. 771.Google Scholar
7.Shatas, S.C. and Gat, A., AG Assoc., Palo Alto, CA, private communications.Google Scholar
8.Lischner, D.J. and Celler, G.K., See Ref. 6, p. 759.Google Scholar
9.Hodgson, R.T., Baglin, J.E.E., Michel, A.E., Mader, S.R. and Gelpey, J.C., “Laser and Solid Interactions and Transient Thermal Processing of Materials”, Narayan, J., Brown, W.L. and Lemons, P.A., eds., Proceedings of the 1982 Materials Research Soc. Conf. in Boston, Vol. 13 (North-Holland, New York 1983), p. 355.Google Scholar
10.Sedgwick, T.O., d'Heurle, F.M. and Cohen, S.A., to be published.Google Scholar
11.Bassous, E., IEEE Trans. Electron Devices 25, 1178 (1978).Google Scholar
12.Bean, K.E., IEEE Trans. Electron Devices 25, 1185 (1978).Google Scholar