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Nanoscale Organic Electronic Devices Formed by Lamination With Stamps

Published online by Cambridge University Press:  11 February 2011

Jana Zaumseil
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Takao Someya
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Zhenan Bao
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Yueh-Lin Loo
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Kirk Baldwin
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
Raymond Cirelli
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
John A. Rogers
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, U.S.A.
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Abstract

Lamination of metal-coated elastomeric stamps against thin films of electroactive organics provides non-invasive, high resolution electrical contacts for investigations of charge transport in these materials. This approach uses the features of relief on the stamps to define, with nanometer resolution, the geometry and separation of electrodes that are formed by uniform evaporation of a thin metal film onto the stamp. Soft, room temperature contact of an element of this type with an organic semiconductor film on a gate dielectric and a gate yields a high performance top contact transistor with source/drain electrodes supported by the stamp. We review here our use of this approach to study the electrical properties of the organic semiconductor pentacene in thin film transistors structures. We also introduce a method for using the same techniques and structures to probe transport through organic monolayers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. See, for example, MRS Bull. 27, (2002) and references contained therein.Google Scholar
2. Loo, Y.-L., Someya, T., Baldwin, K.W., Ho, P., Bao, Z., Dodabalapur, A., Katz, H.E. and Rogers, J.A., Proc. Nat. Acad. Sci. USA 99, 10252 (2002).Google Scholar
3. Zaumseil, J., Someya, T., Bao, Z., Loo, Y.-L., Cirelli, R. and Rogers, J.A., Appl. Phys. Lett. in press.Google Scholar
4. Jacobs, H.O. and Whitesides, G.M., Science 291, 1763 (2001).Google Scholar
5. Rogers, J.A., Dodabalapur, A., Bao, Z. and Katz, H.E., Appl. Phys. Lett. 75, 1010 (1999).Google Scholar
6. Collet, J., Tharaud, O., Chapoton, A. and Vuillaume, D., Appl. Phys. Lett. 761, 1941 (2000).Google Scholar