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Multiwafer Production of Long Wavelength Epitaxial Material
Published online by Cambridge University Press: 25 February 2011
Extract
Low pressure MOVPE in a horizontal reactor has proven to be capable of yielding uniform InP, GalnAs and GaInAsP layers [1, 2]. However, the complexity of some devices as MQW lasers and HEMTs require even further improvement in thickness and compositional uniformity. This can be achieved by using the technique of sub-strate rotation to overcome gas phase depletion problems and geometry related non uniformities.
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- Copyright © Materials Research Society 1991