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Molecular Beam Epitaxy of AlN Layers on Si (111)

Published online by Cambridge University Press:  01 February 2011

Jean-Christophe Moreno ,
Eric Frayssinet ,
Fabrice Semond  and
Jean Massies
Jean-Christophe Moreno
Affiliation:
[email protected], CRHEA-CNRS, Nano, rue Bernard Gregory, Valbonne, 06560, France, +33 493954208
Eric Frayssinet
Affiliation:
[email protected], CRHEA-CNRS, rue Bernard Gregory, Valbonne, 06560, France
Fabrice Semond
Affiliation:
[email protected], CRHEA-CNRS, rue Bernard Gregory, Valbonne, 06560, France
Jean Massies
Affiliation:
[email protected], CRHEA-CNRS, rue Bernard Gregory, Valbonne, 06560, France
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Abstract

In this work, we present a study of epitaxial Aluminium Nitride (AlN) for thin film bulk acoustic wave (BAW) applications. Molecular beam epitaxy (MBE) was used to perform high crystalline quality AlN thin films growth on different silicon substrate preparations. A morphological study was performed by atomic force microscopy (AFM) and scanning electron microscopy (SEM), while structural properties and acoustic wave speed were respectively assessed by X-ray diffraction and acoustic picoseconds.

Keywords

molecular beam epitaxy (MBE)III-Vacoustic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C03-05
Copyright
Copyright © Materials Research Society 2008

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References

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