Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-03T05:39:21.737Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110)

Published online by Cambridge University Press:  21 February 2011

Mohan Krishnamurthy ,
M. Wassermeier ,
H. Weman ,
J. L. Merz  and
P. M. Petroffa
Mohan Krishnamurthy
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
M. Wassermeier
Affiliation:
QUEST NSF Science and Technology Center, University of California, Santa Barbara, CA 93106
H. Weman
Affiliation:
QUEST NSF Science and Technology Center, University of California, Santa Barbara, CA 93106
J. L. Merz
Affiliation:
QUEST NSF Science and Technology Center, University of California, Santa Barbara, CA 93106
P. M. Petroffa
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106 QUEST NSF Science and Technology Center, University of California, Santa Barbara, CA 93106
Get access

Abstract

A study of the molecular beam epitaxial (MBE) growth on singular and vicinal (110) surfaces of GaAs is presented. Quantum well structures and tilted superlattices (TSL) were grown on substrates misoriented 0.5°-2° towards the nearest [010] and [111]A azimuths at growth temperatures ranging from 450° C to 600° C under different growth conditions. The structures were characterized by Nomarski optical microscopy, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy.

Two types of faceting were observed on the surfaces. The structures grown at temperatures above 540°C and As beam fluxes below l×10-5 torr showed V-shaped facets pointing in the [001] direction and are attributed to As deficient island growth. Lower temperatures and higher As beam fluxes lead to surfaces with microfacets that are elongated along the respective step directions on the vicinal surface and are due to step bunching during growth. Their density and height decrease with decreasing vicinal angle and they disappear on the singular (110) surface. The photoluminescence of the GaAs quantum wells grown on these samples is redshifted with respect to that of the quantum wells grown on the flat surface. This is being ascribed to the fact that on the vicinal surface, the recombination takes place at the facets where the quantum wells are wider.

The contrast in the TEM images of the TSL show for the samples misoriented towards [010] that the lateral segregation to the step edges on this surface is appreciable. The TSL spacing and the tilt however show that during growth the vicinal surfaces tend towards a surface with smaller miscut.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 473
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gaines, J. M., Petroff, P. M., Kroemer, H., Simes, R. J., Geels, R. S. and English, J. H., J. Vac. Sci. Technol. B6, (1989) 67,Google Scholar
Fukui, T. and Saito, H., Appl. Phys. Lett. 50, (1987) 824.Google Scholar
[2] Petroff, P. M., Utramicroscopy 31, (1989) 67.Google Scholar
[3] Miller, M. S., Pryor, C.E., Weman, H., Samoska, L. A., Kroemer, H. and Petroff, P. M., J. Crystal Growth 111, (1990) 2683.Google Scholar
[4] Chalmers, S. A., Gossard, A.C, Petroff, P. M. and Kroemer, H., J. Vac. Sci. Technol. B8, (1990) 431.Google Scholar
[5] Lu, Yan-Ten, Petroff, P. M. and Metiu, Horia, Appl. Phys. Lett. 57, (1990) 2683.Google Scholar
[6] Chalmers, S. A., Gossard, A. C. and Kroemer, H., Appl. Phys. Lett. 57, (1990) 1751.CrossRefGoogle Scholar
[7] Wang, W. I., J. Vac. Sci. Technol. B1, (1983) 630.Google Scholar
[8] Takano, Y., Lopez, M., Tonnata, T., Ikei, T., Kanaya, Y., Pak, K. and Yonezu, H., J. Cryst Growth 111, (1991) 216.Google Scholar
[9] Petroff, P. M., Cho, A. Y., Reinhart, F. K., Gossard, A. C. and Wiegmann, W., Phys. Rev. Lett. 48, (1982) 170.Google Scholar
[10] Kuan, T. S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Lett. 54, (1985) 201.Google Scholar
[11] Madhukar, A., Surf. Sci. 132, (1983) 344.Google Scholar
[12] Allen, L. T. P., Weber, E. R., Washburn, J., Pao, Y. C. and Elliot, A. G., J. Cryst Growth 87, (1988) 193.CrossRefGoogle Scholar
[13] Sato, M., Maehashi, K., Asahi, H., Hasegawa, S. and Nakashima, H., Superlattices and Microstructures 7, (1990) 279.Google Scholar
[14] Junming, Z., Yi, Huang, Yongkang, Li and Wei Yi, Jia, J. Cryst Growth 81, (1987) 221.Google Scholar
[15] Pfeiffer, Loren, West, k.W., Stormer, H. L., Eisenstein, J. P., Baldwin, K. W., Gershoni, D. and Spector, J., preprint.Google Scholar
[16] Petroff, P. M., J. Vac. Sci. Technol. 14, (1977) 973.CrossRefGoogle Scholar
[17] van Vechten, J. A., J. Cryst Growth 71, (1985) 326.Google Scholar