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Microstructural Characterization of Antimonide Based III-V Compounds and their Effect On Electro-Optical Properties of Substrate Materials and Devices

Published online by Cambridge University Press:  10 February 2011

P.S. Dutta ,
R.J. Gutmann ,
G.W. Charache  and
C.A. Wang
P.S. Dutta
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
R.J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180
G.W. Charache
Affiliation:
Lockheed Martin Inc., Schenectady, NY 12301
C.A. Wang
Affiliation:
MIT Lincoln Laboratory, Lexington, MA 02420–9108
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Abstract

This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 187
Copyright
Copyright © Materials Research Society 2000

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